2009 Fiscal Year Final Research Report
Fabrication of a novel ultra-violet light-emitting device using gadolinium-doped aluminum nitride
| Project/Area Number |
19360148
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Ritsumeikan University |
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Principal Investigator |
SUZUKI Akira Ritsumeikan University, 総合理工学研究機構, 教授 (10111931)
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| Co-Investigator(Kenkyū-buntansha) |
TANAKA Satoru 九州大学, 大学院・工学研究院, 教授 (80281640)
SONODA Saki 京都工芸繊維大学, 工芸科学研究科, 准教授 (30397690)
ARAKI Tsutomu 立命館大学, 理工学部, 准教授 (20312126)
EMURA Shuichi 大阪大学, 産業科学研究所, 助教 (90127192)
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| Co-Investigator(Renkei-kenkyūsha) |
FUKUI Kazutoshi 福井大学, 工学部, 教授 (80156752)
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| Project Period (FY) |
2007 – 2009
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| Keywords | ワイドギャップ半導体 / 窒化アルミニウム / ガドリニウム / 希土類 / MBE成長法 / スパッタ製膜法 / 紫外発光 / 内殻遷移 |
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| Research Abstract |
To develop a novel ultra-violet (UV) light-emitting device using UV emission from Gd in AlN films, film fabrication and film properties were studied. By a low-cost fabrication method of radio-frequency (RF) sputtering on Si wafers, relations between fabrication conditions and film properties were examined, and those conditions to obtain UV emission of around 315nm at room temperature were found. Optical measurements to find emission mechanism and film fabrication by molecular-beam growth (MBE) were also carried out.
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Research Products
(6 results)
