Noncontact Temperature Measurement During Rapid Thermal Annealing and Investigation on Impurity Activation

2009 Fiscal Year Final Research Report

• Project/Area Number: 19360187
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Measurement engineering
• Research Institution: Hiroshima University
• Principal Investigator: HIGASHI Seiichiro Hiroshima University, 大学院・先端物質科学研究科, 准教授 (30363047)
• Project Period (FY): 2007 – 2009
• Keywords: 計測システム

Research Abstract

Activation of As and B atoms in Silicon wafer surface by thermal plasma jet (TPJ) annealing has been investigated. The sheet resistance of B-implanted samples saturates at an annealing temperature higher than 1400K, while it is 1000K in the case of As-implanted samples. In the case of As, not only the annealing temperature, but faster heating and cooling rates play important role to achieve efficient activation.

Research Products

• [Journal Article] Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation (2010)
  • Author(s): K. Matsumoto, S. Higashi, H. Murakami, S. Miyazaki
  • Journal Title: Jpn. J. Appl. Phys 49 Pages: 04DA02
  • Peer Reviewed
• [Journal Article] Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique (2010)
  • Author(s): S. Higashi, K. Sugakawa, H. Kaku, T. Okada, S. Miyazaki
  • Journal Title: Jpn. J. Appl. Phys 49 Pages: 03CA08
  • Peer Reviewed
• [Journal Article] Millisecond Rapid Thermal Annealing of Si wafer Induced by High Power Density Thermal Plasma Jet Irradiation and Its application to Ultra Shallow Junction Formation (2009)
  • Author(s): H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
  • Journal Title: Jpn. J. Appl. Phys 48(4) Pages: 04C011
  • Peer Reviewed
• [Journal Article] "熱プラズマによるアモルファスシリコンの結晶化, "「講座熱流を伴う反応性プラズマを用いた材料合成プロセス3. 結晶化・相変化制御への応用」 (2009)
  • Author(s): 東清一郎, 宮崎誠一
  • Journal Title: プラズマ・核融合学会誌 85(3) Pages: 119-123
  • Peer Reviewed
• [Journal Article] In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing (2008)
  • Author(s): H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
  • Journal Title: Electrochem. Soc. Trans 13(1) Pages: 31-36
  • Peer Reviewed
• [Journal Article] In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation (2008)
  • Author(s): H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
  • Journal Title: Jpn. J. Appl. Phys 47(4) Pages: 2460-2463
  • Peer Reviewed
• [Presentation] Millisecond Annealing Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation and Its Application to Ultra Shallow Junction Formation (2010)
  • Author(s): S. Higashi
  • Organizer: Ext. Abs. 2010 Int. Workshop Junction Tech. (IWJT-2010)
  • Place of Presentation: Shanghai, China(Invited)
  • Year and Date: 20100510-20100511
• [Presentation] 大気圧熱プラズマジェットを用いたシリコン膜のマイクロ秒溶融結晶化と高性能TFT作製応用 (2010)
  • Author(s): 東清一郎
  • Organizer: 電子情報通信学会技術研究報告シリコン材料・デバイス
  • Place of Presentation: 沖縄青年会館
  • Year and Date: 2010-04-23
• [Presentation] Activation of B and As in Ultra Shallow Junction with Heating and Cooling Rates Controlled Millisecond Annealing Induced by Thermal Plasma Jet (2009)
  • Author(s): K. Matsumoto, S. Higashi, H. Furukawa, T. Okada, H. Murakami, S. Miyazaki
  • Organizer: Ext. Abs. 2009 Int. Conf. Solid Sate Dev. Mat
  • Place of Presentation: Sendai, Japan
  • Year and Date: 20091007-20091009
• [Presentation] Millisecond Thermal Processing for TFT and ULSI (2009)
  • Author(s): S. Higashi
  • Organizer: Semiconductor Tech. for Ultra Large Scale Integrated Circuits and Thin Film Transistors II
  • Place of Presentation: Xi'an, China(Invited)
  • Year and Date: 20090705-20090710
• [Presentation] Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique (2009)
  • Author(s): K. Sugakawa, S. Higashi, H. Kaku, T. Okada, S. Miyazaki
  • Organizer: Proc. AM-FPD 09
  • Place of Presentation: Nara, Japan
  • Year and Date: 20090701-20090703
• [Presentation] 結晶化・相変化への応用熱プラズマジェットによるアモルファスシリコンの結晶化 (2009)
  • Author(s): 東清一郎
  • Organizer: 第31回真空展VACUUM2009併設真空トピックス, 日本真空協会9月研究例会, スパッタリングおよびプラズマプロセス技術部会第115回定例研究会
  • Place of Presentation: 東京ビッグサイトSputtering & Plasma Processes
  • Year and Date: 2009-09-16
• [Presentation] 熱プラズマジェットによるミリ秒急速熱処理とその半導体プロセス応用 (2009)
  • Author(s): 東清一郎
  • Organizer: 第44回応用物理学会スクール「安価、簡単、便利～大気圧プラズマの基礎と応用～」
  • Place of Presentation: 筑波大学
  • Year and Date: 2009-04-01
• [Presentation] Generation of High Density Thermal Plasma Jet and Its Application to Millisecond Annealing of Si Wafer Surface for Shallow Junction Formation (2008)
  • Author(s): H. Furukawa, S. Higashi, T. Okada, H. Murakami, S. Miyazaki
  • Organizer: Proc. Int. Symp. Dry Process
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20081126-20081128
• [Presentation] Millisecond Rapid Thermal Annealing of Si Wafer Induced by High Density Thermal Plasma Jet Irradiation (2008)
  • Author(s): H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
  • Organizer: Ext. Abs. 2008 Int. Conf. Solid Sate Dev. Mat
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20080924-20080926
• [Presentation] Application of Thermal Plasma Jet Annealing to Channel Crystallization and Doping for Thin Film Transistor Fabrication (2008)
  • Author(s): H. Kaku, S. Higashi, T. Yorimoto, T. Okada, H. Furukawa, S. Miyazaki
  • Organizer: Dig. Tech. Pap. AM-FPD 08
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20080702-20080704
• [Presentation] In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing (2008)
  • Author(s): H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
  • Organizer: 213th Electrochemical Society (ECS) Meeting Abs
  • Place of Presentation: Phoenix, USA
  • Year and Date: 20080518-20080522
• [Presentation] Impact of Annealing condition on the Efficiency of Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films (2008)
  • Author(s): H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki
  • Organizer: 1st Int. Conf. on Plasma-NanoTechnology and Science (IC-PLANTS 2008)
  • Place of Presentation: Nagoya, Japan
  • Year and Date: 20080313-20080314
• [Presentation] Formation of Source and Drain for Polycrystalline Si Thin Film Transistors Using Thermal Plasma Jet Induced Impurity Activation (2008)
  • Author(s): H. Kaku, S. Higashi, T. Yorimoto, T. Okada, H. Furukawa, H. Murakami, S. Miyazaki
  • Organizer: Proc. 4th Int. TFT Conf
  • Place of Presentation: Seoul, Korea
  • Year and Date: 20080124-20080125
• [Presentation] High Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si Films (2007)
  • Author(s): H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki
  • Organizer: Ext. Abs. 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20071112-20071114
• [Presentation] In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation (2007)
  • Author(s): H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
  • Organizer: Ext. Abs. 2007 Int. Conf. Solid Sate Dev. Mat
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 20070919-20070921
• [Presentation] High Efficiency Activation of Phosphorus Atoms Induced by Thermal Plasma Jet Crystallization of Doped Amorphous Si Films (2007)
  • Author(s): H. Kaku, S. Higashi, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki
  • Organizer: Abst. 2007 Material Research Society Spring Meeting
  • Place of Presentation: San Francisco, U.S. A
  • Year and Date: 20070909-20070913
• [Presentation] "Poly-Si TFT新たなSi膜結晶化法(熱プラズマジェット法)"シンポジウム「Poly-Si TFT最近の展開と今後」 (2007)
  • Author(s): 東清一郎
  • Organizer: 第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 20070904-20070808
• [Presentation] Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si Films (2007)
  • Author(s): H. Kaku, S. Higashi, H. Furukawa, T. Okada, H. Murakami, S. Miyazaki
  • Organizer: Dig. Tech. Pap. AM-FPD 07
  • Place of Presentation: Hyogo, Japan
  • Year and Date: 20070711-20070713
• [Presentation] Application of Thermal Plasma Jet to Crystallization of Amorphous Si Films on Glass Substrate and Thin Film Transistor Fabrication (2007)
  • Author(s): S. Higashi
  • Organizer: 6th Asian-European Int. Conf. Plasma Surf. Eng. (AEPSE 2007) Workshop on Flat-panel and Flexible Devices
  • Place of Presentation: Nagasaki, Japan
  • Year and Date: 2007-09-28
• [Presentation] 熱プラズマジェットを用いたミリ秒急速熱処理技術のTFT作製プロセス応用 (2007)
  • Author(s): 東清一郎
  • Organizer: 半導体界面制御技術第154委員会第58回研究会資料
  • Place of Presentation: 首都大学東京
  • Year and Date: 2007-05-16
• [Book] 薄膜トランジスタ(薄膜材料デバイス研究会編) (2008)
  • Author(s): 浦岡行治,神谷利夫,木村睦,佐野直樹,鮫島俊之,清水耕作,竹知和重,中村雅一,東清一郎,古田守,堀田将
  • Total Pages: 229,75～133
  • Publisher: コロナ社
• [Remarks]
  • URL: http://home.hiroshima-u.ac.jp/semicon