2010 Fiscal Year Final Research Report
Study of insulator/Si interfaces and their stress using a monoenergetic positron beam
| Project/Area Number |
19360285
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Physical properties of metals
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| Research Institution | University of Tsukuba |
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Principal Investigator |
UEDONO Akira University of Tsukuba, 大学院・数理物質科学研究科, 教授 (20213374)
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| Project Period (FY) |
2007 – 2010
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| Keywords | 陽電子消滅 / 低速陽電子ビーム / 絶縁膜 |
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| Research Abstract |
We developed an analysis method for metal oxides/semiconductor structures based on the positron annihilation technique to study device processes. Using monoenergetic positron beams, XPS, and measurements of the electric properties of samples, we characterized TiN/SiO_2/Si HfSiO_x/Si CVD-SiO_2, and SiO_2 to study the relationship between point defects and the electric properties. We also studied low-k materials and barrier metals in Cu/low-k structures.
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[Journal Article] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application2009
Author(s)
R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
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Journal Title
Proc.IEEE Int.Electron Device Meeting (IEDM)
Pages: 131-134
Peer Reviewed
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[Presentation] Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams2010
Author(s)
A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, Y.Hirose, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
Organizer
2010 IEEE Int.Interconnect Technology Conf.
Place of Presentation
Hyatt Regency San Francisco Airport Hotel, Burlingame, California, USA
Year and Date
2010-06-08
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[Presentation] Vacancy-type defects in ultra-shallow junctions fabricated using plasma doping studied by positron annihilation2010
Author(s)
A.Uedono, K.Tsutsui, S.Ishibashi, H.Watanabe, S.Kubota, K.Tenjinbayashi1, Y.Nakagawa, B.Mizuno, T.Hattori, H.Iwai
Organizer
10th Int.Workshop on Junction Technology
Place of Presentation
FuXuan Hotel at Fundan University, FuXuan Hotel, Shanghai, China
Year and Date
2010-05-11
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[Presentation] Degradation in HfSiON film induced by electrical stress application2010
Author(s)
R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
Organizer
217th Electrochemical Society Meeting
Place of Presentation
Hyatt Regency Vancouver and The Fairmont Hotel Vancouver, Vancouver, Canada
Year and Date
2010-04-27
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[Presentation] 低速陽電子ビームを用いたCu/Low-k配線構造中の欠陥検出2010
Author(s)
上殿明良,井上尚也,林喜宏,江口和弘,中村友二,廣瀬幸範,吉丸正樹,大島永康,大平俊行,鈴木良一
Organizer
配線・実装技術と関連材料技術,
Place of Presentation
機械振興会館 東京
Year and Date
2010-02-05
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[Presentation] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films During Electrical Stress Application2009
Author(s)
R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
Organizer
2009 IEEE Int.Electron Devices Meeting
Place of Presentation
Hilton Baltimore, Baltimore, MD, USA
Year and Date
20091207-20091209
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[Presentation] Characterization of low-k SiOCH layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams2009
Author(s)
A.Uedono, N.Inoue, Y.Hayashi, K.Eguchi, T.Nakamura, M.Yoshimaru, N.Oshima, T.Ohdaira, R.Suzuki
Organizer
12tn IEEE 2009 Int.Interconnect Tech.
Place of Presentation
Royton Sapporo Hotel, Hokkaido, Japan
Year and Date
20090601-20090603
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[Presentation] Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration2009
Author(s)
N.Asami, T.Owada, S.Akiyama, N.Ohara, Y.Iba, T.Kouno, H.Kudo, S.Takesako, T.Osada, T.Kirimura, H.Watatani, A.Uedono, Y.Nara, M.Kase
Organizer
12tn IEEE 2009 Int.Interconnect Tech.
Place of Presentation
Royton Sapporo Hotel, Hokkaido, Japan
Year and Date
20090601-20090603
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