2009 Fiscal Year Final Research Report

Purification of sputtering target metals for high-k insulator films of MOSFET devices

Research Project

Project/Area Number	19360339
Research Category	Grant-in-Aid for Scientific Research (B)
Allocation Type	Single-year Grants
Section	一般
Research Field	Metal making engineering
Research Institution	Tohoku University
Principal Investigator	MIMURA Kouji Tohoku University, 多元物質科学研究所, 准教授 (00091752)
Co-Investigator(Kenkyū-buntansha)	ISSHIKI Minoru 東北大学, 多元物質科学研究所, 教授 (20111247)
Project Period (FY)	2007 – 2009
Keywords	高純度金属 / 高純度精製 / 水素プラズマ溶解 / 帯溶融 / ハフニウム / ジルコニウム / 希土類金属 / チタン
Research Abstract	Purification of Hf, Zr, Ti, La and Ce, needed as the sputtering target metals for the advanced electronic devices, was examined by means of thermal plasma arc techniques. For purification of Hf, Zr and Ti, hydrogen plasma arc melting (HPAM) was used and, then, their high purity metals were obtained by the remarkable reduction of many volatile metallic impurities like Fe, Al, and Cu during HPAM under atmospheric pressure. On the other hand, for purification of La and Ce, plasma arc zone melting (PZM) was applied and, then, high purity both metals were prepared by the excellent segregation of several metallic impurities like Fe and Al and, furthermore, the vaporization reduction of volatile impurities like Ca and Mn during PZM of La and Ce rods.

(5 results)