2009 Fiscal Year Final Research Report
Study of InAsSbN/GaAsSbN new type quantum structure device in the infra-red wavelength region.
| Project/Area Number |
19560016
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka Prefecture University |
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Principal Investigator |
KAWAMURA Yuichi Osaka Prefecture University, 産学官連携機構, 教授 (80275289)
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| Project Period (FY) |
2007 – 2009
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| Keywords | ヘテロ構造 |
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| Research Abstract |
New types of InGaAs(N)/GaAsSb type II photo-detectors and InAsSbN strained-quantum well lasers were studied. A Room temperature operation of 2D-image sensor of InGaAs/GaAsSb type II quantum well with low dark current was obtained. Laser operation at 2.3 μm of InAsSbN quantum well lasers was also obtained at 210K.
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