Atomic-scale dielectric properties at the interface between Si and La-based oxides

2009 Fiscal Year Final Research Report

• Project/Area Number: 19560020
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: The University of Electro-Communications
• Principal Investigator: NAKAMURA Jun The University of Electro-Communications, 電気通信学部, 准教授 (50277836)
• Project Period (FY): 2007 – 2009
• Keywords: ナノ材料 / 電子デバイス / 表面界面物性

Research Abstract

密度汎関数理論に基づく第一原理電子状態計算を用いて、La酸化物超薄膜単体およびLa酸化物とSi基板界面における原子レベル誘電特性、電子状態計算を行った。La酸化物表面においては、表面緩和により誘電率が著しく低下することがわかった。また、界面におけるバンドオフセットは、界面原子配列の詳細に大きく依存することがわかった。

Research Products

• [Journal Article] n-plane strain effects on dielectric properties of the HfO2 thin film (2009)
  • Author(s): S. Wakui, J. Nakamura, A. Natori
  • Journal Title: J. Vac. Sci. Technol. B 27 Pages: 2020
  • Peer Reviewed
• [Journal Article] Negative donors in bulk Si and Si/SiO2 quantum wells in a magnetic field (2009)
  • Author(s): J. Inoue, T. Chiba, A. Natori, J. Nakamura
  • Journal Title: Phys. Rev. B 79 Pages: 305206
  • Peer Reviewed
• [Journal Article] Atomic scale dielectric constant near the SiO2/Si(001) interface (2008)
  • Author(s): S. Wakui, J. Nakamura, A. Natori
  • Journal Title: J. Vac. Sci. Technol. B 26 Pages: 1579
• [Journal Article] Dielectric properties of the interface between Si and SiO2 (2007)
  • Author(s): S. Wakui, J. Nakamura, A. Natori
  • Journal Title: Jpn. J. Appl. Phys. 46 Pages: 3261
  • Peer Reviewed
• [Journal Article] Nano-Scale Profile of the Dielectric Constant Near the Si/oxide Interface: A First-Principles Approach (2007)
  • Author(s): J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
  • Journal Title: ECS Trans. 11 Pages: 273
  • Peer Reviewed
• [Journal Article] Dielectric discontinuity at a twin boundary in Si(111) (2007)
  • Author(s): J. Nakamura, A. Natori
  • Journal Title: Proc. 28th Int. Conf. Semi. Phys. 893 Pages: 5
  • Peer Reviewed
• [Presentation] Nano-scale profile of the dielectric constant near surfaces and interfaces: A first-principles approach (2009)
  • Author(s): J. Nakamura
  • Organizer: 2nd International Workshop on Epitaxial growth and Fundamental Properties of Semiconductor Nanostructures
  • Place of Presentation: SemiconNano 2009(招待講演)
  • Year and Date: 2009-08-12
• [Presentation] Nano-scale profile of the dielectric constant near the Si/Oxide interface: A first-principles approach (2007)
  • Author(s): J. Nakamura, S. Wakui, S. Eguchi, R. Yanai, A. Natori
  • Organizer: 212th Electrochemical society (ECS-212)
  • Place of Presentation: Washington D.C., USA
  • Year and Date: 2007-10-09
• [Remarks]
  • URL: http://www.natori.ee.uec.ac.jp/junj/index-j.html