Film formation utilizing bi-layer and (111)-slope on Si (001) substrate

2008 Fiscal Year Final Research Report

• Project/Area Number: 19569003
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: University of Toyama
• Principal Investigator: SAITO Mitsufumi University of Toyama, 地域連携推進機構・産学連携部門, 研究員 (70452092)
• Project Period (FY): 2007 – 2008
• Keywords: ヘテロエピタキシャル成長 / インジウムアンチモン(InSb) / シリコン(Si) / MBE

Research Abstract

本研究では、Si基板上における良質なInSb, AlInSb薄膜の形成を目指した。Si基板上での低消費電力高速論理回路のためのInSb-basedデバイス集積化を将来的な目標とする。Si基板とInSb,AlInSb間の大きな格子不整合の問題を解決するために、1)InSb/Si, AlInSb/Si間にInSb単分子層の導入2)Si(001)基板上に傾斜(111)面の形成、を行うことで、従来の直接成長と比べ、薄く品質の良い薄膜形成が可能である事を示した。

Research Products

• [Journal Article] High quality InSb films grown on Si(111) substrate via InSb bi-layer (2009)
  • Author(s): M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
  • Journal Title: e-Journal of Surface Science and Nano Technology Vol.7 Pages: 145-148
• [Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate (2008)
  • Author(s): M. Saito, M. Mori, K. Maezawa Appl
  • Journal Title: Surf. Sci 254 Pages: 6052-6054
• [Journal Article] Heteroepitaxial InSb films grown via Si(111)-7x3-In surface reconstruction (2008)
  • Author(s): M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa
  • Journal Title: Phys. Stat. Sol (c)5, No.9 Pages: 2772-2774
• [Journal Article] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111)substrate
  • Author(s): M. Saito, M. Mori, K. Ueda, K. Maezawa
  • Journal Title: Phys. Stat. Sol.(c)(accepted) : Refereed
• [Journal Article] Heteroepitaxial growth of InSb films on V-grooved Si(001)substrate
  • Author(s): M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N. B. Ahmad, K. Murata, K. Maezawa
  • Journal Title: e-Journal of Surface Science and Nano Technology (accepted) : Refereed
• [Presentation] Heteroepitaxial growth of InSb films on V-grooved Si(001)substrate (2008)
  • Author(s): M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N. B. Ahmad, K. Maezawa
  • Organizer: 5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
  • Place of Presentation: Waseda University, Tokyo, Japan
  • Year and Date: 20081109-13
• [Presentation] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer (2008)
  • Author(s): M. Saito, M. Mori, C. Tatsuyama, K. Maezawa
  • Organizer: 8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
  • Place of Presentation: Tohoku University, Sendai, Japan
  • Year and Date: 20081019-23
• [Presentation] High quality InSb films grown on Si(111) substrate via InSb bi-layer (2008)
  • Author(s): M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
  • Organizer: 8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
  • Place of Presentation: Tohoku University, Sendai, Japan
  • Year and Date: 20081019-23
• [Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111) substrate (2008)
  • Author(s): M. Saito, M. Mori, K. Ueda, K. Nakatani, K. Maezawa
  • Organizer: 35th International Symposium on Compound Semiconductors (ISCS2008)
  • Place of Presentation: Europa-Park, Rust, Germany
  • Year and Date: 20080921-24
• [Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate via InSb bi-layer (2008)
  • Author(s): M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, Y. Shinmura, K. Maezawa
  • Organizer: 15th International Conference on Molecular Beam Epitaxy (MBE2008)
  • Place of Presentation: Univ. of British Columbia, Vancouver, Canada
  • Year and Date: 20080803-08
• [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜のヘテロエピタキシャル成長 (2008)
  • Author(s): 中谷公彦、斉藤光史、上田広司、森雅之、前澤宏一
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市・中部大学
  • Year and Date: 2008-09-04
• [Presentation] (111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長 (2008)
  • Author(s): 五十嵐弘樹、森雅之、斉藤光史、岩杉達矢、ノルスルヤティ ビンティ アハマド、前澤宏一
  • Organizer: 秋季第69回応用物理学会学術講演会
  • Place of Presentation: 愛知県春日井市・中部大学
  • Year and Date: 2008-09-04
• [Presentation] Si(111)基板上での30°回転InSb薄膜層形成に対するIn及びSb層の効果 (2008)
  • Author(s): 斉藤光史、森雅之、上田広司、前澤宏一
  • Organizer: 電気通信学会 電子デバイス研究会
  • Place of Presentation: 石川県金沢市・金沢大学
  • Year and Date: 2008-06-14
• [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜の成長 (2008)
  • Author(s): 斉藤光史、森雅之、上田広司、吉田達雄、新村康成、前澤宏一
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 千葉県船橋市・日本大学 理工学部
  • Year and Date: 2008-03-29
• [Presentation] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate (2007)
  • Author(s): M. Saito, M. Mori, K. Maezawa
  • Organizer: 5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
  • Place of Presentation: Tokyo Metropolitan Univ., Tokyo, Japan
  • Year and Date: 20071112-15