Fabrication of High-quality SiC-MOSFETs for Advanced Power Electronics

2011 Fiscal Year Final Research Report

• Project/Area Number: 19676001
• Research Category: Grant-in-Aid for Young Scientists (S)
• Allocation Type: Single-year Grants
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Osaka University
• Principal Investigator: WATANABE Heiji 大阪大学, 大学院・工学研究科, 教授 (90379115)
• Project Period (FY): 2007 – 2011
• Keywords: パワーエレクトロニクス / MOSデバイス

Research Abstract

Silicon carbide(SiC) has gained considerable attention for power electronics. Among the various types of power devices, metal-oxide-semiconductor(MOS) should become a key component for next generation SiC switching devices. In this study, we investigated fundamental aspects of SiC oxidation and MOS interfaces, and proposed novel methods for improving electrical properties of SiC-MOS devices. We also fabricated MOS transistors with high-permittivity gate dielectrics and successfully demonstrated superior device performance.

Research Products

• [Journal Article] Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-Face and(000-1) C-Face Substrates (2012)
  • Author(s): H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, and T. Shimura
  • Journal Title: Mater. Sci. Forum Volume: 697 Pages: 717-720
  • Peer Reviewed
• [Journal Article] Impact of Interface Defect Passivation on Conduction Band Offset at SiO_2/ 4H-SiC Interface (2012)
  • Author(s): T. Hosoi, T. Kirino, A. Chanthaphan, Y. Uenishi, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
  • Journal Title: Mater. Sci. Forum Volume: 721 Pages: 717-720
  • Peer Reviewed
• [Journal Article] Impact of UV Irradiation on Thermally Grown 4H-SiC MOS Devices (2012)
  • Author(s): D. Ikeguchi, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
  • Journal Title: Mater. Sci. Forum Volume: 765 Pages: 717-720
  • Peer Reviewed
• [Journal Article] Gate Stack Technologies for SiC Power MOSFETs (2011)
  • Author(s): H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, and T. Shimura
  • Journal Title: ECS Trans Volume: 41[ 3] Pages: 77
  • Peer Reviewed
• [Journal Article] Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO_2/ 4H-SiC(0001) interface and its correlation with electrical properties (2011)
  • Author(s): H. Watanabe, T. Hosoi, T. Kirino, Y. Kagei, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, and T. Shimura
  • Journal Title: Appl. Phys. Lett Volume: 99 Pages: 021907
  • Peer Reviewed
• [Journal Article] Impact of Stacked AlON/ SiO_2 Gate Dielectrics for SiC Power Devices (2011)
  • Author(s): H. Watanabe, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi and T. Shimura
  • Journal Title: ECS Trans Volume: 35[ 2] Pages: 265
  • Peer Reviewed
• [Journal Article] Surface Cleaning and Etching of 4H-SiC(0001) Using High-Density Atmospheric Pressure Hydrogen Plasma (2011)
  • Author(s): H. Watanabe, H. Ohmi, H. Kakiuchi, T. Hosoi, T. Shimura, K. Yasutake
  • Journal Title: Journal of Nanoscience and Nanotechnology Volume: 11 Pages: 2802
  • Peer Reviewed
• [Journal Article] Investigation of Surface and Interface Morphology of Thermally Grown SiO_2 Dielectrics on 4H-SiC(0001) Substrates (2011)
  • Author(s): T. Hosoi, K. Konzono, Y. Uenishi, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe
  • Journal Title: Mater. Sci. Forum Volume: 342 Pages: 679-680
  • Peer Reviewed
• [Journal Article] Energy Band Structure of SiO_2/ 4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer (2011)
  • Author(s): H. Watanabe, T. Kirino, Y. Kagei, J. Harries, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura
  • Journal Title: Mater. Sci. Forum Volume: 386 Pages: 679-680
  • Peer Reviewed
• [Journal Article] Reduction of Charge Trapping Sites in Al_2O_3/ SiO_2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices (2011)
  • Author(s): T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe
  • Journal Title: Mater. Sci. Forum Volume: 496 Pages: 679-680
  • Peer Reviewed
• [Journal Article] Improved Characteristics of 4H-SiC MISFET with AlON/ Nitrided SiO_2 Stacked Gate Dielectrics (2010)
  • Author(s): T. Hosoi, Y. Kagei, T. Kirino, Y. Watanabe, K. Kozono, S. Mitani, Y. Nakano, T. Nakamura, and H. Watanabe
  • Journal Title: Mater. Sci. Forum Volume: 991 Pages: 645-648
  • Peer Reviewed
• [Journal Article] Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(001) Using Conductive Atomic Force Microscopy (2010)
  • Author(s): K. Kozono, T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
  • Journal Title: Mater. Sci. Forum Volume: 821 Pages: 645-648
  • Peer Reviewed
• [Journal Article] Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces (2010)
  • Author(s): Y. Kagei, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
  • Journal Title: Mater. Sci. Forum Volume: 507 Pages: 645-648
  • Peer Reviewed
• [Journal Article] Impact of a treatment combining nitrogen plasma exposure and forming gas annealing on defect passivation of SiO_2/ SiC interfaces (2009)
  • Author(s): H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino, T. Hosoi, T. Shimura, S. Mitani, Y. Nakano, and T. Nakamura
  • Journal Title: Mater. Sci. Forum Volume: 525 Pages: 615-617
  • Peer Reviewed
• [Journal Article] AlON/ SiO_2 Stacked Gate Dielectrics for 4H-SiC MIS Devices (2009)
  • Author(s): T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, and H. Watanabe
  • Journal Title: Mater. Sci. Forum Volume: 541 Pages: 615-617
  • Peer Reviewed
• [Presentation] Insight into Bias-temperature Instability of 4H-SiC MOS Devices with Thermally Grown SiO_2 Dielectrics (2012)
  • Author(s): A. Chanthaphan, T. Kirino, Y. Uenishi, D. Ikeguchi, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
  • Organizer: 2012 MRS Spring Meeting
  • Place of Presentation: San Francisco, CA
  • Year and Date: 2012-04-11
• [Presentation] Gate Stack Technologies for SiC Power MOSFETs(Invited) (2011)
  • Author(s): H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, and T. Shimura
  • Organizer: 220th ECS Meeting
  • Place of Presentation: Boston, MA
  • Year and Date: 2011-10-10
• [Presentation] Impact of Interface Defect Passivation on Conduction Band Offset at SiO_2/ 4H-SiC Interface (2011)
  • Author(s): T. Hosoi, T. Kirino, A. Chanthaphan, Y. Uenishi, D. Ikeguchi, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, and H. Watanabe
  • Organizer: International Conference on Silicon Carbide and Related Materials
  • Place of Presentation: Cleveland, OH
  • Year and Date: 2011-09-15
• [Presentation] Synchrotron Radiation Photoelectron Spectroscopy Study of Thermally Grown Oxides on 4H-SiC(0001) Si-face and(000-1) C-face Substrates(Invited) (2011)
  • Author(s): H. Watanabe, T. Hosoi, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, and T. Shimura
  • Organizer: International Conference on Silicon Carbide and Related Materials
  • Place of Presentation: Cleveland, OH
  • Year and Date: 2011-09-14
• [Presentation] Impact of Stacked AlON/ SiO_2 Gate Dielectrics for SiC Power Devices(Invited) (2011)
  • Author(s): H. Watanabe, T. Kirino, Y. Uenishi, A. Chanthaphan, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoiand T. Shimura
  • Organizer: 219th ECS Meeting
  • Place of Presentation: Montreal, QC, Canada
  • Year and Date: 2011-05-03
• [Presentation] Energy Band Structure of Thermally Grown SiO_2/ 4H-SiC Interfaces and its Modulation Induced by Post-oxidation Treatments (2010)
  • Author(s): T. Kirino, Y. Kagei, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
  • Organizer: 41st IEEE Semiconductor Interface Specialists Conference
  • Place of Presentation: San Diego, CA
  • Year and Date: 2010-12-02
• [Presentation] Energy Band Structure of SiO_2/ 4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer (2010)
  • Author(s): H. Watanabe, T. Kirino, Y. Kagei, J. Harries, A. Yoshigoe, Y. Teraoka, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, and T. Shimura
  • Organizer: 8th European Conference on Silicon Carbide and Related Materials
  • Place of Presentation: Oslo, Norway
  • Year and Date: 2010-09-01
• [Presentation] Reduction of Charge Trapping Sites in Al_2O_3/ SiO_2 Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices (2010)
  • Author(s): T. Hosoi, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, T. Nakamura, T. Shimura, H. Watanabe
  • Organizer: 8th European Conference on Silicon Carbide and Related Materials
  • Place of Presentation: Oslo, Norway
  • Year and Date: 2010-08-31
• [Presentation] Improved electrical properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided 4H-SiC(0001) surfaces (2009)
  • Author(s): Y. Kagei, T. Kirino, Y. Watanabe, S. Mitani, Y. Nakano, T. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
  • Organizer: International Conference on Silicon Carbide and Related Materials
  • Place of Presentation: Nurnberg, Germany
  • Year and Date: 2009-10-13
• [Presentation] Direct Observation of Dielectric Breakdown Spot in Thermal Oxides on 4H-SiC(0001) Using Conductive Atomic Force Microscopy (2009)
  • Author(s): K. Kozono, Y. Kagei, T. Kirino, S. Mitani, Y. Nakano, Y. Nakamura, T. Hosoi, T. Shimura, and H. Watanabe
  • Organizer: International Conference on Silicon Carbide and Related Material
  • Place of Presentation: Nurnberg, Germany
  • Year and Date: 2009-10-13
• [Presentation] AlON/ SiO_2 Stacked Gate Dielectrics for 4H-SiC MIS Devices (2008)
  • Author(s): T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, and H. Watanabe
  • Organizer: 7th European Conference on Silicon Carbide and Related Materials
  • Place of Presentation: Barcelona, Spain
  • Year and Date: 2008-09-11
• [Presentation] Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO_2/ SiC Interfaces (2008)
  • Author(s): H. Watanabe, Y. Watanabe, M. Harada, Y. Kagei, T. Kirino, T. Hosoi, T. Shimura, S. Mitani, N. Nakano, and T. Nakamura
  • Organizer: 7th European Conference on Silicon Carbide and Related Materials
  • Place of Presentation: Barcelona, Spain
  • Year and Date: 2008-09-10
• [Book] 半導体SiC技術と応用 (2011)
  • Author(s): 渡部平司
  • Total Pages: 293-297
  • Publisher: 日刊工業新聞社
• [Remarks] 研究室ホームページ
  • URL: http://www-asf.mls.eng.osaka-u.ac.jp/
• [Patent(Industrial Property Rights)] 半導体装置およびその製造方法 (2012)
  • Inventor(s): 渡部平司、志村考功、細井卓治、箕谷周平、中野佑紀、中村亮太、中村孝
  • Industrial Property Rights Holder: ローム(株)
  • Industrial Property Number: 特許権、特願2012-039059
  • Filing Date: 2012-02-24
• [Patent(Industrial Property Rights)] 半導体装置 (2009)
  • Inventor(s): 渡部平司、志村考功、細井卓治、桐野嵩史、箕谷周平、中野佑紀
  • Industrial Property Rights Holder: ローム(株)
  • Industrial Property Number: 特許権、特願2009-206374
  • Filing Date: 2009-09-07
• [Patent(Industrial Property Rights)] 半導体装置 (2009)
  • Inventor(s): 渡部平司、志村考功、細井卓治、桐野嵩史、箕谷周平、中野佑紀
  • Industrial Property Rights Holder: ローム(株)
  • Industrial Property Number: 特許権、特願2009-206373
  • Filing Date: 2009-09-07
• [Patent(Industrial Property Rights)] 半導体装置の製造方法および半導体装置 (2009)
  • Inventor(s): 渡部平司、志村考功、細井卓治、桐野嵩史、箕谷周平、中野佑紀
  • Industrial Property Rights Holder: ローム(株)
  • Industrial Property Number: 特許権、特願2009-206372
  • Filing Date: 2009-09-07