Development of new scintillator materials with vacuum ultraviolet emission

2010 Fiscal Year Final Research Report

• Project/Area Number: 19686001
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: YOSHIKAWA Akira 東北大学, 金属材料研究所, 教授 (50292264)
• Project Period (FY): 2007 – 2010
• Keywords: 結晶工学 / 先端機能デバイス / 放射線・X線・粒子線 / 医療・福祉

Research Abstract

In this study, main target is to develop new scintillator materials with VUV emission (shorter than 200nm). The following topics were intensively investigated. 1. High quality and shaped crystal growth of VUV scintillator 2. Test of radiation response using VUV scintillator with gas counter as detector 3. 2dimensional radiation mapping using above mentioned detector The bulk crystal growth technology of Nd:LaF_3、Nd:LuLiF_4 and Nd:LuF_3 single crystal is confirmed. In addition, Alpha-ray and X-ray signal and 2 dimensional image were obrained from all the detectors.

Research Products

• [Journal Article] Optical Characteristic Improvement of Neodymium-Doped Lanthanum Fluoride Thin Films Grown by Pulsed Laser Deposition for Vacuum Ultraviolet Application (2012)
  • Author(s): M. Ieda, T. Ishimaru, S. Ono, K. Yamanoi, M. Cadatal-Raduban, T. Shimizu, N. Sarukura, K. Fukuda, T. Suyama, Y. Yokota, T. Yanagida, and A. Yoshikawa
  • Journal Title: Japanese Journal of Applied Physics Volume: vol. 51
  • Peer Reviewed
• [Journal Article] Crystal growth and scintillation properties of Nd:CaF2 (2011)
  • Author(s): H. Tanaka, N. Kawaguchi, N. Abe, Y. Furuya, Y. Yokota, T. Yanagida, J. Pejchal, M. Nikl, Y. Kawazoe, and A. Yoshikawa
  • Journal Title: Optical Materials Volume: vol. 33 Pages: 284-287
  • Peer Reviewed
• [Journal Article] Crystal growth and optical properties of the Nd3+ doped LuF3 single crystals (2011)
  • Author(s): K. Fukuda, S. Ishizu, N. Kawaguchi, T. Suyama, T. Yanagida, Y. Yokota, M. Nikl, and A. Yoshikawa
  • Journal Title: Optical Materials Volume: vol. 33 Pages: 1143-1146
  • Peer Reviewed
• [Journal Article] Crystal growth and scintillation characteristics of the Nd3+ doped LiLuF4 single crystals (2011)
  • Author(s): K. Fukuda, N. Kawaguchi, S. Ishizu, T. Nagami, T. Suyama, T. Yanagida, Y. Yokota, M. Nikl, and A. Yoshikawa
  • Journal Title: Optical Materials Volume: vol. 33 Pages: 924-927
  • Peer Reviewed
• [Journal Article] Crystal growth Nd distribution and luminescence properties of (Na0.425+xLu0.575-x-yNdy)F2.15-2x single crystals (2011)
  • Author(s): Y. Furuya, H. Tanaka, K. Fukuda, N. Kawaguchi, Y. Yokota, T. Yanagida, V. Chani, M. Nikl, and A. Yoshikawa
  • Journal Title: Journal of Crystal Growth Volume: vol. 318 Pages: 791-795
  • Peer Reviewed
• [Journal Article] Crystal growth and scintillation properties of (NaxCa1-2xLux-yNdy)F-2 single crystals (2011)
  • Author(s): Y. Furuya, S. Wakahara, M. Sugiyama, H. Tanaka, K. Fukuda, N. Kawaguchi, Y. Yokota, T. Yanagida, A. Yoshikawa
  • Journal Title: Optical Materials Volume: vol. 34 Pages: 75-78
  • Peer Reviewed
• [Journal Article] Crystal growth and scintillation properties of NdF3 single crystal (2010)
  • Author(s): Y. Furuya, N. Kawaguchi, N. Abe, Y. Yokota, T. Yanagida, M. Nikl, A. Yoshikawa
  • Journal Title: Optical Materials Volume: vol. 32 Pages: 878-881
  • Peer Reviewed
• [Journal Article] Nd concentration dependence on the optical and scintillation properties of Nd doped BaF2 (2010)
  • Author(s): N. Kawaguchi, T. Yanagida, Y. Futami, K. Fukuda, T. Suyama, Y. Yokota, A. Yoshikawa, M. Nikl
  • Journal Title: Optical Materials Volume: vol. 32 Pages: 1325-1328
  • Peer Reviewed
• [Journal Article] VUV-UV-visible luminescence of Nd3+, Er3+ and Tm3+ in LiLuF4 single crystal host (2010)
  • Author(s): J. Martincik, M. Nikl, S. Ishizu, K. Fukuda, T. Suyama, A. Beitlerova, K. Polak, V. Babin, A. Yoshikawa
  • Journal Title: Radiation Measurements Volume: vol. 45 Pages: 403-405
  • Peer Reviewed
• [Journal Article] Nd3+:LaF3 as a Step-Wise Excited Scintillator for Femtosecond Ultraviolet Pulses (2010)
  • Author(s): T. Nakazato, M. Cadatal-Raduban, K. Yamanoi, M. Tsuboi, Y. Furukawa, M. Pham, E. Estacio, T. Shimizu, N. Sarukura, K. Fukuda, T. Suyama, T. Yanagida, Y. Yokota, A. Yoshikawa, F. Saito
  • Journal Title: Ieee Transactions on Nuclear Science Volume: vol. 57 Pages: 1208-1210
  • Peer Reviewed
• [Journal Article] Doubly doped BaY2F8:Er,Nd VUV scintillator (2010)
  • Author(s): J. Pejchal, M. Nikl, K. Fukuda, N. Kawaguchi, T. Yanagida, Y. Yokota, A. Yoshikawa, V. Babin
  • Journal Title: Radiation Measurements Volume: vol. 45 Pages: 265-267
  • Peer Reviewed
• [Journal Article] Luminescence Mechanism in Doubly Doped LaF3:Er,Nd VUV Scintillator (2010)
  • Author(s): J. Pejchal, M. Nikl, K. Fukuda, N. Kawaguchi, T. Yanagida, Y. Yokota, A. Yoshikawa, V. Babin
  • Journal Title: Ieee Transactions on Nuclear Science Volume: vol. 57 Pages: 1196-1199
  • Peer Reviewed
• [Journal Article] Crystal growth and VUV luminescence properties of Er3+- and Tm3+ -doped LiCaAlF6 for detectors (2010)
  • Author(s): A. Yoshikawa, T. Yanagida, Y. Yokota, A. Yamaji, Y. Fujimoto, J. Pejchal, V. I. Chani, N. Kawaguchi, S. Ishizu, K. Fukuda, T. Suyama, M. Nikl
  • Journal Title: Optical Materials Volume: vol. 32 Pages: 845-849
  • Peer Reviewed
• [Journal Article] Crystal Growth and Scintillation Properties of Tm, Nd Codoped LaF3 Single Crystals (2010)
  • Author(s): N. Abe, Y. Yokota, Y. Yanagida, N. Kawaguchi, J. Pejchal, M. Nikl, K. Fukuda, A. Yoshikawa
  • Journal Title: Ieee Transacitons on Nuclear Science Volume: vol. 57 Pages: 1278-1271
  • Peer Reviewed
• [Journal Article] Crystal Growth and Luminescence Properties of Tm:BaF2 Single Crystals (2010)
  • Author(s): N. Abe, Y. Yokota, T. Yanagida, J. Pejchal, F. Nara, N. Kawaguchi, K. Fukuda, M. nikl, A. Yoshikawa
  • Journal Title: Japanese Journal of Applied Physics Volume: vol. 49
  • Peer Reviewed
• [Journal Article] Evaluation of Gamma-Ray Response of Tm:BaF2 Single Crystals (2010)
  • Author(s): N. Abe, Y. Yokota, T. Yanagida, N. Kawaguchi, J. Pejchal, A. Yoshikawa
  • Journal Title: Ieee Transactions of Nuclear Science Volume: vol. 57 Pages: 1304-1307
  • Peer Reviewed
• [Journal Article] Crystal Growth and Characterization of Rare Earth Doped K3LuF6 (2010)
  • Author(s): N. Abe, Y. Yokota, T. Yanagida, N. Kawaguchi, K. Fukuda, J. Pejchal, M. Nikl, A. Yoshikawa
  • Journal Title: Ieee Transactions of Nuclear Science Volume: vol. 57 Pages: 1320-1324
  • Peer Reviewed
• [Journal Article] Crystal growth and scintillation properties of Tm:K2NaLuF6 (2010)
  • Author(s): N. Abe, T. Yanagidaa, Y. Yokotaa, A. Maeo, J. Pejchal, Y. Fujimoto, Y. Furuya, H. Tanaka, N. Kawaguchi, K. Fukuda, V. Chani, K. Kameda, M. Nikl, A. Yoshikawa
  • Journal Title: Optical Materials Volume: vol. 32 Pages: 589-594
  • Peer Reviewed
• [Journal Article] Developments of a large area VUV sensitive gas PMT with GEM/mn PIC (2009)
  • Author(s): H. Sekiya, C. Ida, H. kubo, S. Kurosawa, T. Tanimori, A. Yoshikawa, T. Yanagida, Y. Yokota, K. Fukuda, S. Ishizu, N. Kawaguchi, T. Suyama
  • Journal Title: Journal of Instrumentation Volume: vol. 4
  • Peer Reviewed
• [Journal Article] Vacuum ultraviolet luminescence from a micro-pulling-down method grown Nd3+:(La-09,Ba-0.1)F-2.9 (2009)
  • Author(s): M. Cadatal, Y. Furukawa, S. Ono, M. Pham, E. Estacio, T. Nakazato, T. Shimizu, N. Sarukura, K. Fukuda, T. Suyama, A. Yoshikawa, F. Saito
  • Journal Title: Journal of Luminescence Volume: vol. 129 Pages: 1629-1631
  • Peer Reviewed
• [Presentation] Nd:LuF3の単結晶成長とその光学特性 (2010)
  • Author(s): 吉川彰, 横田有為, 柳田健之, 福田健太郎, 河口範明, 石津澄人, 須山敏尚
  • Organizer: 第5回日本フラックス成長研究発表会
  • Place of Presentation: 長野
  • Year and Date: 2010-12-03
• [Presentation] Crystal growth and luminescent properties of Nd:BaY2F8 single crystal for VUV emitting scintillator (2009)
  • Author(s): A. Yoshikawa, T. Yanagida, Y. Yokota, N. Kawaguchi, S. Ishizu, K. Fukuda, J. Pejchal, V. Babin, M. Nikl
  • Organizer: 7th International Conference on Luminescent Detectors and Transformers of Ionizing Radiation LUMDETR 2009
  • Place of Presentation: Krakow, Poland
  • Year and Date: 20090712-17
• [Presentation] 真空紫外域に発光する新規発光結晶の開発 (2009)
  • Author(s): 吉川彰, 柳田健之, 横田有為, 福田健太郎, 河口範明, 須山敏尚, 猿倉信彦
  • Organizer: レーザー研シンポジウム2009
  • Place of Presentation: 吹田
  • Year and Date: 20090423-24
• [Presentation] Single Crystal Growth and Optical Properties of Pr-doped K(Y.Lu)3F10 (2008)
  • Author(s): A. Yoshikawa, M. Kimura, C. Kamada, T. Yanagida, Y. Yokota, F. Saito
  • Organizer: Japanese-French Joint Workshop, First Workshop Tohoku University- EMAC-INSA Ecole des Mines, Albi & INSA, Toulouse
  • Place of Presentation: Albi, France
  • Year and Date: 20081201-02
• [Presentation] Crystal growth, optical properties and neutron responses of Ce3+6 single crystal (2008)
  • Author(s): A. Yoshikawa, T. Yanagida, N. Andrey, K. J. Kim, N. Kawaguchi, K. Fukuda, T. Suyama, M. Nikl
  • Organizer: The Institute of Electrical and Electronics Engineers, Inc. (IEEE NSS/MIC) 2008
  • Place of Presentation: Dresden, Germany
  • Year and Date: 20081019-25
• [Presentation] Phase transition control, melt growth of (Gd,RE)F3 single crystal and their luminescent properties (2008)
  • Author(s): A. Yoshikawa, A. Jouini, K. Kamada, G. Boulon, M. Nikl, F. Saito
  • Organizer: The 15th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'8)
  • Place of Presentation: Lyon, France
  • Year and Date: 20080707-11
• [Presentation] ポストCe:LiCAFを目指したCe系新紫外レーザー結晶の開発・シンチレータ結晶への展開 (2008)
  • Author(s): 吉川彰
  • Organizer: レーザー研シンポジウム2008
  • Place of Presentation: 吹田
  • Year and Date: 20080417-18
• [Patent(Industrial Property Rights)] フッ化物結晶及び真空紫外発光素子 (2011)
  • Inventor(s): 吉川彰, 志村玲子, 福田健太郎, 石津澄人, 須山敏尚
  • Industrial Property Rights Holder: トクヤマ, 東北大学
  • Industrial Property Number: 特許登録, 第4785198号
  • Acquisition Date: 2011-07-22
• [Patent(Industrial Property Rights)] 放射線検出装置及び放射線の検出方法 (2011)
  • Inventor(s): 高橋浩之, 吉川彰, 志村玲子, 福田健太郎,吉川彰, 志村玲子, 福田健太郎
  • Industrial Property Rights Holder: トクヤマ, 東京大学, 東北大学
  • Industrial Property Number: 特許登録, 第4685042号
  • Acquisition Date: 2011-01-12
• [Patent(Industrial Property Rights)] フッ化物単結晶、真空紫外発光素子及びシンチレータ― (2010)
  • Inventor(s): 福田健太郎, 石津澄人, 河口範明, 吉川彰, ヤンペジャール, 柳田健之, 横田有為
  • Industrial Property Rights Holder: トクヤマ, 東北大学
  • Industrial Property Number: 特願, 2010-276109
  • Filing Date: 2010-12-13
• [Patent(Industrial Property Rights)] フッ化物単結晶、真空紫外発光素子及びシンチレータ― (2010)
  • Inventor(s): 吉川彰, 柳田健之, 横田有為, 福田健太郎, 石津澄人, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2010-276109
  • Filing Date: 2010-12-10
• [Patent(Industrial Property Rights)] フッ化物結晶、放射線検出用シンチレーター及び放専線検出器 (2010)
  • Inventor(s): 吉川彰, 柳田健之, 藤本裕, 福田健太郎, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2010-191462
  • Filing Date: 2010-08-27
• [Patent(Industrial Property Rights)] フッ化物単結晶、シンチレーター及びフッ化物単結晶の製造方法 (2010)
  • Inventor(s): 吉川彰, 柳田健之, 藤本裕, 福田健太郎, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2010-207696
  • Filing Date: 2010-09-16
• [Patent(Industrial Property Rights)] 真空紫外発光素子及びシンチレーター (2010)
  • Inventor(s): 福田健太郎, 石津澄人, 河口範明, 吉川彰, 柳田健之, 横田有為
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2010-059395
  • Filing Date: 2010-03-16
• [Patent(Industrial Property Rights)] フッ化物結晶、真空紫外発光素子及び真空紫外発光シンチレーター (2010)
  • Inventor(s): 吉川彰, 柳田健之, 横田有為, 福田健太郎, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2010-047772
  • Filing Date: 2010-03-09
• [Patent(Industrial Property Rights)] フッ化物結晶、真空紫外発光素子及び真空紫外発光シンチレーター (2009)
  • Inventor(s): 吉川彰, 柳田健之, 横田有為, 阿部直人, 福田健太郎, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2009-294829
  • Filing Date: 2009-12-25
• [Patent(Industrial Property Rights)] フッ化物結晶、真空紫外発光素子及び真空紫外発光シンチレーター (2009)
  • Inventor(s): 吉川彰, 柳田健之, 横田有為, 阿部直人, 福田健太郎, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2009-294957
  • Filing Date: 2009-12-25
• [Patent(Industrial Property Rights)] 放射線画像検出器 (2009)
  • Inventor(s): 福田健太郎, 石津澄人, 河口範明, 須山敏尚, 吉川彰, 柳田健之, 横田有為, 窪秀利, 谷森達, 関谷洋之
  • Industrial Property Rights Holder: トクヤマ, 東北大学, 京都大学, 東京大学
  • Industrial Property Number: 特願, 2009-207779
  • Filing Date: 2009-09-09
• [Patent(Industrial Property Rights)] 真空紫外発光デバイス (2009)
  • Inventor(s): 小野晋吾, 石津澄人, 福田健太郎, 河口範明, 長見知史, 須山敏尚, 吉川彰, 柳田健之, 横田有為
  • Industrial Property Rights Holder: 名古屋工業大学, 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2009-206052
  • Filing Date: 2009-09-07
• [Patent(Industrial Property Rights)] 真空紫外発光素子 (2009)
  • Inventor(s): 石津澄人, 福田健太郎, 河口範明, 須山敏尚, 吉川彰, 柳田健之, 横田有為
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2009-163343
  • Filing Date: 2009-07-10
• [Patent(Industrial Property Rights)] 金属フッ化物結晶及び真空紫外発光素子 (2009)
  • Inventor(s): 石津澄人, 福田健太郎, 河口範明, 須山敏尚, 吉川彰, 柳田健之, 横田有為, マーティン ニクル
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2009-163344
  • Filing Date: 2009-07-10
• [Patent(Industrial Property Rights)] 希土類含有K3LuF6、真空紫外発光素子及び真空紫外発光シンチレーター (2009)
  • Inventor(s): 吉川彰, 柳田健之, 横田有為, 福田健太郎, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2009-136181
  • Filing Date: 2009-06-05
• [Patent(Industrial Property Rights)] フッ化物結晶、真空紫外発光素子及び真空紫外発光シンチレーター (2009)
  • Inventor(s): 吉川彰, 柳田健之, 横田有為, 福田健太郎, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2009-136182
  • Filing Date: 2009-06-05
• [Patent(Industrial Property Rights)] 真空紫外発光素子及び真空紫外発光シンチレーター (2009)
  • Inventor(s): 吉川彰, 柳田健之, 横田有為, 福田健太郎, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ
  • Industrial Property Number: 特願, 2009-136180
  • Filing Date: 2009-06-05
• [Patent(Industrial Property Rights)] 中性子用シンチレータ (2008)
  • Inventor(s): 吉川彰, 柳田健之, 横田有為, 福田健太郎, 石津澄人, 河口範明, 須山敏尚
  • Industrial Property Rights Holder: 東北大学, トクヤマ(株)
  • Industrial Property Number: 特願, 2008-075323
  • Filing Date: 2008-03-24