2009 Fiscal Year Final Research Report
Surface and interface control in the epitaxial growth of boride thin films
| Project/Area Number |
19686043
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (A)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Material processing/treatments
|
|---|
| Research Institution | Japan Advanced Institute of Science and Technology |
|---|
Principal Investigator |
TAKAMURA Yukiko (山田 由起子) Japan Advanced Institute of Science and Technology, マテリアルサイエンス研究科, 講師 (90344720)
|
|---|
| Research Collaborator |
ベラ サンブナス 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 研究員
フロランス アントワーヌ 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 研究員
カトウア モドウスミタ 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 研究員
ZHANG Wenyong 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 研究員
|
|---|
| Project Period (FY) |
2007 – 2009
|
| Keywords | MBE / エピタキシャル / 走査プローブ顕微鏡 / 超薄膜 |
|---|
| Research Abstract |
A unique ultrahigh vacuum chemical vapor epitaxy system, which prevents oxygen incorporation into boride films and also has capability of in-situ growth monitoring, was successfully built. The epitaxial growth of zirconium diboride thin films was carried out on silicon, sapphire, and gallium nitride. Surface segregating elements originating from the substrates, which were observed as different surface reconstructions during the growth, were found to be responsible for the reaction at the surface. Single-crystallinity was confirmed for the films grown on sapphire substrates under optimized conditions, driven by a stable interface structure, while the films grown on silicon contained some misoriented crystallites due to competing interfaces.
|
Research Products
(7 results)
