2009 Fiscal Year Final Research Report
Development of novel structure analysis method using one-dimensional X-ray focusing device
| Project/Area Number |
19760020
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
YASHIRO Wataru The University of Tokyo, 大学院・新領域創成科学研究科, 助教 (10401233)
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| Project Period (FY) |
2007 – 2009
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| Keywords | ビーム応用 |
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| Research Abstract |
A method to evaluate structures and strains in the neXt generation silicon device using multiple X-ray diffraction was developed. By using this method it was revealed that strains are locally relaXed at the SiO_2/Si and Si_3N_4/Si interfaces, which were formed by Kr/O_2 and Xe/NH_3 plasmas, respectively. To apply this method to investigate local structures and strains in silicon devices, a multi-layer Laue lens-type X-ray focusing device was designed by using a simulator based on Takagi-Taupin type dynamical theory of X-ray diffraction. The focusing device was fabricated by using a deposition system. For visualization of three-dimensional strain distribution, another method based on X-ray phase imaging microscopy was also developed.
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