2009 Fiscal Year Final Research Report
Elemental Identification of the dopant on the semiconductor surface by synchrotron-radiation-based scanning tunneling microscopy.
| Project/Area Number |
19760028
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Institute for Molecular Science |
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Principal Investigator |
TAKAGI Yasumasa Institute for Molecular Science, 物質分子科学研究領域, 助教 (30442982)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 半導体表面 / ドーパント / 元素識別 / 走査トンネル顕微鏡 / 放射光 |
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| Research Abstract |
I have measured the Cu nanodomains on a Ge(111) c(2x8) surface by scanning tunneling microscopy (STM) combined with synchrotron radiation. I have gotten the atomic resolution image of the surface by STM under x-ray radiation. The signal intensity and its difference between the Cu and Ge areas increase in proportion to the induced x-ray intensity. Meanwhile, the Ge atoms move about the surface in the clean Ge(111) area under hard x-ray radiation and the c(2x8) structure on the surface breaks quickly.
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