2009 Fiscal Year Final Research Report
Identification of defects degrading SiC device performance by the excess carrier lifetime mapping with micrometer resolution
| Project/Area Number |
19760215
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
KATO Masashi Nagoya Institute of Technology, 大学院・工学研究科, 准教授 (80362317)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 作成 / 評価技術 |
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| Research Abstract |
We have developed an excess carrier lifetime mapping system with micrometer resolution for identification of defects degrading device performance in silicon carbide. As a result, although we have obtained excess carrier lifetime maps for silicon samples, further improvement of the system has been required to obtain excess carrier lifetime maps for silicon carbide. On the other hand, by characterizing excess carrier lifetime in p-type silicon carbide with various defects concentration, we have found that carbon-related defects have impact on the excess carrier lifetime in p-type silicon carbide.
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