Research of single mode semiconductor membrane laser on SOI waveguide

2008 Fiscal Year Final Research Report

• Project/Area Number: 19760231
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Kanazawa University (2008); Tokyo Institute of Technology (2007)
• Principal Investigator: MARUYAMA Takeo Kanazawa University, 電子情報学系, 准教授 (60345379)
• Project Period (FY): 2007 – 2008
• Keywords: 半導体レーザ / 集積レーザ / シリコンフォトニクス / 光集積回路 / 分布帰還形レーザ / ウエハボンディング / 光導波路

Research Abstract

チップ間光インターコネクションを行うためには、電子デバイスと光デバイスとをチップ内に集積する必要があり、そのための技術開発が急務となる。本研究は、これまで半導体レーザとして実績のあるIII-V族化合物半導体(GaInAsP/InP)をSOI基板に直接貼り付けることによりシリコンLSI上での集積化に適した単一モード半導体レーザの作製を行った。その結果、SOI基板上への光励起における単一モード発振および高温(80℃)動作、さらに電流注入構造を試作し、LEDおよびレーザ発振を実現した。

Research Products

• [Journal Article] Loss reduction of Si wire waveguide fabricated by edge-enhancement writing for electron beam lithography and reactive ion etching using double layered resist mask with C60 (2009)
  • Author(s): K. Inoue, D. Plumwongrot, N. Nishiyama, S. Sakamoto, H. Enomoto, S. Tamura, T. Maruyama and S. Arai
  • Journal Title: Jpn. J. Appl. Phys. vol. 48, no. 3 Pages: 030208(3pages)
  • Peer Reviewed
• [Journal Article] Injection-type GaInAsP-InP-Si distributed-feedback laser directly bonded on silicon-on-insulator substrate (2009)
  • Author(s): T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama and S. Arai
  • Journal Title: IEEE Photon. Technol. Lett. vol. 21, no. 5 Pages: 283-285
  • Peer Reviewed
• [Journal Article] Polarization anisotropy of spontaneous emission spectra in GaInAsP/InP quantum-wire structures (2008)
  • Author(s): D. Plumwongrot, T. Maruyama, A. Haque, H. Yagi, K. Miura, Y. Nishimoto and S. Arai
  • Journal Title: Jpn. J. Appl. Phys. vol. 47, no. 5 Pages: 3735-3741
  • Peer Reviewed
• [Journal Article] Single-mode operation of GaInAsP/InP-membrane distributed feedback (DFB) lasers bonded on silicon-on-insulator (SOI) substrate with rib-waveguide structure (2007)
  • Author(s): T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto and S. Arai
  • Journal Title: Jpn. J. Appl. Phys. vol. 46, no. 48 Pages: L1206-L1208
  • Peer Reviewed
• [Journal Article] GaInAsP/InP membrane BH-DFB laser with air-bridge structure (2007)
  • Author(s): H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama and S. Arai
  • Journal Title: Jpn. J. Appl. Phys. vol. 46, no. 47 Pages: L1158-L1160
  • Peer Reviewed
• [Journal Article] 85℃ continuous-wave operation of GaInAsP/InP-membrane buried heterostructure distributed feedback lasers with polymer cladding Layer (2007)
  • Author(s): S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, T. Maruyama, N. Nishiyama and S. Arai
  • Journal Title: Jpn. J. Appl. Phys. vol. 46, no. 47 Pages: L1155-L1157
  • Peer Reviewed
• [Journal Article] Bragg wavelength detuning in GaInAsP/InP DFB lasers with wirelike active regions (2007)
  • Author(s): D. Plumwongrot, Y. Nishimoto, S. M. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama and S. Arai
  • Journal Title: Jpn. J. Appl. Phys. vol. 46, no. 45 Pages: L1090-L1092
  • Peer Reviewed
• [Journal Article] Micro-photoluminescence characterizations of GaInAsP/InP single quantum wires fabricated by dry etching and regrowth (2007)
  • Author(s): H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama and S. Arai
  • Journal Title: J. Appl. Phys. vol. 102, no. 9 Pages: 093509-1-093509-5
  • Peer Reviewed
• [Journal Article] Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating (2007)
  • Author(s): S. Sakamoto, H. Naitoh, M. Ohtake, Y. Nishimoto, S. Tamura, T. Maruyama, N. Nishiyama and S. Arai
  • Journal Title: IEEE J. Sel. Topics Quantum. Electron. vol. 13, no. 5 Pages: 1135-1141
  • Peer Reviewed
• [Journal Article] High T0 operation of 1590 nm GaInAsP/InP quantum-wire distributed feedback lasers by Bragg wavelength detuning (2007)
  • Author(s): Y. Nishimoto, H. Yagi, K. Miura, D. Plumwongrot, K. Ohira, T. Maruyama and S. Arai
  • Journal Title: Jpn. J. Appl. Phys. vol. 46, no. 17 Pages: L411-L413
  • Peer Reviewed
• [Presentation] シリコン基板上半導体レーザ・発光デバイスの現状 (2009)
  • Author(s): 西山伸彦、丸山武男、荒井滋久
  • Organizer: 2009年電子情報通信学会総合大会, CI-2-4
  • Place of Presentation: 愛媛
  • Year and Date: 2009-03-18
• [Presentation] SOI上の半導体薄膜レーザ (2008)
  • Author(s): 荒井滋久、丸山武男、西山伸彦、奥村忠嗣、黒川宗高、白尾瑞基、米澤英徳、近藤大介、伊藤瞳
  • Organizer: 第10回電子情報通信学会 シリコンフォトニクス研究会, SIPH2008-15, 招待講演
  • Place of Presentation: 東京
  • Year and Date: 2008-11-07
• [Presentation] Loss reduction of Si wire waveguide on SOI substrate prepared by parallel plate RIE using double layered resist mask with C60 (2008)
  • Author(s): K. Inoue, D. Plumuwongrot, N. Nishiyama, S. Sakamoto, H. Enomoto, S. Tamura, T. Maruyama and S. Arai
  • Organizer: the IEEE Nanotechnology Materials and Devices Conference 2008(NMDC 2008), Mo P20
  • Place of Presentation: Kyoto(Japan)
  • Year and Date: 2008-10-20
• [Presentation] CMOSプロセスによるアバランシェフォトダイオード (2008)
  • Author(s): 高松英輝、山王紀明、丸山武男、飯山宏一
  • Organizer: 平成20年度電気関係学会北陸支部連合大会, D-22
  • Place of Presentation: 富山
  • Year and Date: 2008-09-13
• [Presentation] PETをコア層に用いた有機光導波路の検討 (2008)
  • Author(s): 小野裕佑、高村俊裕、丸山武男、飯山宏一
  • Organizer: 平成20年度電気関係学会北陸支部連合大会, D-29
  • Place of Presentation: 富山
  • Year and Date: 2008-09-13
• [Presentation] Injection type GaInAsP/InP DFB lasers directly bonded on SOI substrate (2008)
  • Author(s): H. Yonezawa, T. Maruyama, T. Okumura, N. Nishiyama and S. Arai
  • Organizer: International Nano-Optoelectronic Workshop 2008(iNOW 2008), P4-16
  • Place of Presentation: Tokyo, Saiko and Shonan(Japan)
  • Year and Date: 2008-08-08
• [Presentation] Evaluation of Si wire waveguide fabricated by parallel plate RIE process using double layered EB resist containing C60 (2008)
  • Author(s): K. Inoue, N. Nishiyama, H. Enomoto, S. Tamura, T. Maruyama and S. Arai
  • Organizer: International Nano-Optoelectronic Workshop 2008(iNOW 2008), P3-24
  • Place of Presentation: Tokyo, Saiko and Shonan(Japan)
  • Year and Date: 2008-08-07
• [Presentation] CH4/H2-RIE induced optical property degradation in GaInAsP/InP quantum-well structures (2008)
  • Author(s): M. Kurokawa, D. Plumwonrot, T. Maruyama, N. Nishiyama and S. Arai
  • Organizer: International Nano-Optoelectronic Workshop 2008(iNOW 2008), P3-19
  • Place of Presentation: Tokyo, Saiko and Shonan(Japan)
  • Year and Date: 2008-08-07
• [Presentation] SOI基板への直接貼り付け法によるGaInAsP/InP DFBレーザ (2008)
  • Author(s): 奥村忠嗣、丸山武男、米澤英徳、西山伸彦、荒井滋久
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会, LQE2008-29, pp. 45-50
  • Place of Presentation: 東京
  • Year and Date: 2008-06-27
• [Presentation] RIE-plasma induced optical property degradation in GaInAsP/InP quantum-well structures (2008)
  • Author(s): M. Kurokawa, D. Plumwongrot, K. Ozawa, T. Maruyama, S. Arai and N. Nishiyama
  • Organizer: The 20th International Conference on Indium Phosphide and Related Materials(IPRM2008), WeP39
  • Place of Presentation: Versailles(France)
  • Year and Date: 2008-05-28
• [Presentation] Injection type GaInAsP/InP/Si DFB lasers directly bonded on SOI substrate (2008)
  • Author(s): T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, S. Arai
  • Organizer: The 20th International Conference on Indium Phosphide and Related Materials(IPRM2008), TuA1.6
  • Place of Presentation: Versailles(France)
  • Year and Date: 2008-05-27
• [Presentation] C60含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上 (2008)
  • Author(s): 井上敬太、プルームウォンロート・タノーム、西山伸彦、阪本真一、榎本晴基、田村茂雄、丸山武男、荒井滋久
  • Organizer: 第55回応用物理学関係連合講演会, 29p-ZG-15
  • Place of Presentation: 千葉
  • Year and Date: 2008-03-29
• [Presentation] 直接貼付法によるSOI基板上注入形GaInAsP/InP DFBレーザ (2008)
  • Author(s): 奥村忠嗣、丸山武男、米澤英徳、西山伸彦、荒井滋久
  • Organizer: 第55回応用物理学関係連合講演会, 29p-ZQ-4
  • Place of Presentation: 千葉
  • Year and Date: 2008-03-29
• [Presentation] GaInAsP/InP量子井戸構造のRIEプラズマによるPL強度劣化とアニールによる回復 (2008)
  • Author(s): 黒川宗高、プルームウォンロート・タノーム、小沢浩二、丸山武男、西山伸彦、荒井滋久
  • Organizer: 第55回応用物理学関係連合講演会, 28p-P9-7
  • Place of Presentation: 千葉
  • Year and Date: 2008-03-28
• [Presentation] 低温現像によるGaInAsP/InP量子細線構造の線幅ばらつきの低減 (2008)
  • Author(s): プルームウォンロート・タノーム、小沢浩二、黒川宗高、田村茂雄、丸山武男、西山伸彦、荒井滋久
  • Organizer: 第55回応用物理学関係連合講演会, 28p-E-18
  • Place of Presentation: 千葉
  • Year and Date: 2008-03-28
• [Presentation] Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths (2008)
  • Author(s): D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, and S. Arai
  • Organizer: OPTO2008(part of SPIE Photonics West 2008)
  • Place of Presentation: San Jose(USA)
  • Year and Date: 2008-01-24
• [Presentation] Length dependencies of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process (2008)
  • Author(s): D. Plumwongrot, Y. Tamura, Y. Nishimoto, M. Kurokawa, T. Maruyama, N. Nishiyama, and S. Arai
  • Organizer: OPTO2008(part of SPIE Photonics West 2008), 6902-4
  • Place of Presentation: San Jose(USA)
  • Year and Date: 2008-01-21
• [Presentation] Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures (2007)
  • Author(s): D. Plumwongrot, Y. Tamura, T. Maruyama, N. Nishiyama, and S. Arai
  • Organizer: The 20th International Microprocesses and Nanotechnology Conference(MNC2007), 6A-4-51
  • Place of Presentation: Kyoto(Japan)
  • Year and Date: 2007-11-06
• [Presentation] Observation of RIE Induced Damage on Lasing Properties of GaInAsP/InP MQW Lasers Fabricated by 2-step Growths (2007)
  • Author(s): D. Plumwongrot, M. Kurokawa, T. Okumura, Y. Nishimoto, T. Maruyama, N. Nishiyama, and S. Arai
  • Organizer: The 34th International Symposium on Compound Semiconductors(ISCS2007), ThC-P9
  • Place of Presentation: Kyoto(Japan)
  • Year and Date: 2007-10-18
• [Presentation] シリコン上レーザ実現への展望 (2007)
  • Author(s): 丸山武男、奥村忠嗣、荒井滋久
  • Organizer: 2007年電子情報通信学会エレクトロニクスソサィエティ大会, CK-1-8, 招待講演
  • Place of Presentation: 鳥取
  • Year and Date: 2007-09-10
• [Presentation] 2段階OMVPE 成長GaInAsP/InP量子井戸レーザにおけるRIEプラズマ損傷とその低減 (2007)
  • Author(s): 黒川宗高、Dhanorm Plumwongrot、西本頼史、丸山武男、西山伸彦、荒井滋久
  • Organizer: 第68回応用物理学会学術講演会,7p-C-6, Digest III -p. 1162
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] 直接貼付法によるSOI基板上GaInAsP/InP-LED (2007)
  • Author(s): 奥村忠嗣、丸山武男、金丸正樹、荒井滋久
  • Organizer: 第68回応用物理学会学術講演会, 7a-C-13, Digest III -p. 1160
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] Wire-Length Dependence ofPolarization Anisotropy in GaInAsP/InPQuantum-Wire Structures (2007)
  • Author(s): Dhanorm Plumwongrot、田村洋介、西本頼史、黒川宗高、丸山武男、西山伸彦、荒井滋久
  • Organizer: 第68回応用物理学会学術講演会, 7a-N-11, Digest III -p.1421
  • Place of Presentation: 札幌
  • Year and Date: 2007-09-07
• [Presentation] GaInAsP/InP Membrane DFB lasers directly boded on SOI substrate with rib-waveguide structure (2007)
  • Author(s): T. Maruyama, T. Okumura, M. Kanemaru, S. Sakamoto, S. Tamura, and S. Arai
  • Organizer: 12th OptoElectronics and Communications Conference/16th Intl Conference on Integrated Optics & Optical Fiber Communication(OECC/IOOC 2007), 12D1-3
  • Place of Presentation: Yokohama(Japan)
  • Year and Date: 2007-07-12
• [Presentation] 80℃ CW operation of GaInAsP/InP membrane BH-DFB laser with air-bridge structure (2007)
  • Author(s): H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N, Nishiyama, and S. Arai
  • Organizer: The 19th International Conference on Indium Phosphide and Related Materials(IPRM 2007), no.ThB1-2, pp.476-479
  • Place of Presentation: Matsue(Japan)
  • Year and Date: 2007-05-17
• [Presentation] Improved temperature dependence of GaInAsP/InP DFB lasers with wirelike active regions by Bragg wavelength detuning (2007)
  • Author(s): Y. Nishimoto, D. Plumwongrot, S. M. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama, and S. Arai
  • Organizer: The 19th International Conference on Indium Phosphide and Related Materials(IPRM2007), no.ThB2-3, pp.513-516
  • Place of Presentation: Matsue(Japan)
  • Year and Date: 2007-05-15
• [Presentation] Fundamental-mode operation of GaInAsP/InP membrane DFB lasers bonded on SOI substrate and its waveguide integration (2007)
  • Author(s): T. Okumura, T. Maruyama, M. Kanemaru, S. Sakamoto, S. Tamura, and S. Arai
  • Organizer: The 19th International Conference on Indium Phosphide and Related Materials(IPRM 2007), TuB2-2, pp.35-38
  • Place of Presentation: Matsue(Japan)
  • Year and Date: 2007-05-15
• [Presentation] Photoluminescence of GaInAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth (2007)
  • Author(s): H. Itoh, M. Yoshita, H. Akiyama, D. Plumwongrot, T. Maruyama, S. Arai
  • Organizer: Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference(CLEO/QELS 2007), CThGG3
  • Place of Presentation: Baltimore(USA)
  • Year and Date: 2007-05-10
• [Presentation] エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ (2007)
  • Author(s): 内藤秀幸、阪本真一、大竹守、奥村忠嗣、丸山武男、西山伸彦、荒井滋久
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会, LQE2007-21, pp. 19-22
  • Place of Presentation: 東京
  • Year and Date: 2007-01-29