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2009 Fiscal Year Final Research Report

Fabrication of InSb quantum well on Si using surface reconstruction Assisted growth method and its application for ultra-fast FET

Research Project

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Project/Area Number 19760233
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionUniversity of Toyama

Principal Investigator

MORI Masayuki  University of Toyama (90303213)

Project Period (FY) 2007 – 2009
Keywords電子デバイス・集積回路 / ヘテロエピタキシャル成長 / 表面再構成制御成長法 / InSb
Research Abstract

InSb has attracted much interest for application of ultra-fast and low power devices. To realize the InSb-based FET, we grew the InSb and AlInSb films using new growth method called "Surface Reconstruction assisted growth", and evaluated them. The fully rotated InSb and AlInSb films were successfully grown using Si(111)-√<7>×√<3>-In surface reconstruction. However, due to its high hall concentration and low resistivity, trial FET didn't work as a transistor.

  • Research Products

    (35 results)

All 2010 2009 2008 2007 Other

All Journal Article (9 results) (of which Peer Reviewed: 9 results) Presentation (24 results) Remarks (2 results)

  • [Journal Article] Heteroepitaxial growth of InSb films on the patterned Si(001) substrate2010

    • Author(s)
      T. Iwasugi, M. Mori, H. Igarashi, K. Murata, M. Saito, K. Maezawa
    • Journal Title

      Physics Procedia 3

      Pages: 1329-1333

    • Peer Reviewed
  • [Journal Article] InSb films grown on the V-grooved Si(001) substrate with InSb bi-layer2010

    • Author(s)
      M. Mori, S. Khamseh, T. Iwasugi, K. Nakatani, K. Murata, M. Saito, K. Maezawa
    • Journal Title

      Physics Procedia 3

      Pages: 1335-1339

    • Peer Reviewed
  • [Journal Article] Heteroepitaxial growth of InSb films on V-grooved Si(001) substrate2009

    • Author(s)
      M. Mori, H. Igarashi, T. Iwasugi, K. Murata, K. Maezawa, M. Saito
    • Journal Title

      e-Journal of Surface Science and Nano Technology 7

      Pages: 669-672

    • Peer Reviewed
  • [Journal Article] Heteroepitaxial growth of rotate AlInSb layer mediated by InSb bi-layer on Si(111) substrate2009

    • Author(s)
      M. Saito, M. Mori, K. Ueda, K. Maezawa
    • Journal Title

      Phys. Stat. Sol. (c) 6,No.6

      Pages: 1497-1500

    • Peer Reviewed
  • [Journal Article] High quality InSb films grown on Si(111) substrate via InSb bi-layer2009

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
    • Journal Title

      e-Journal of Surface Science and Nano Technology Vol.7

      Pages: 145-148

    • Peer Reviewed
  • [Journal Article] High-temperature growth of heteroepitaxial InSb films on Si(111) substrate via the InSb bi-layer2009

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, K. Maezawa
    • Journal Title

      J. Cryst. Growth 311

      Pages: 1692-1695

    • Peer Reviewed
  • [Journal Article] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2008

    • Author(s)
      M. Saito, M. Mori, K. Maezawa
    • Journal Title

      Appl. Surf. Sci. 254

      Pages: 6052-6054

    • Peer Reviewed
  • [Journal Article] Crystal orientations of InSb films on a Si(111) substrate by inserting AlSb buffer layer2008

    • Author(s)
      K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa
    • Journal Title

      Phys. Stat. Sol. (c) 5,No.9

      Pages: 2778-2780

    • Peer Reviewed
  • [Journal Article] eteroepitaxial InSb films grown via Si(111)-√7x√3-In surface reconstruction2008

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa
    • Journal Title

      Phys. Stat. Sol. (c) 5,No.9

      Pages: 2772-2774

    • Peer Reviewed
  • [Presentation] 表面再構成制御成長法を用いて作製したSi上AlInSb層の特性評価2010

    • Author(s)
      辻成介、中谷公彦、上田広司、森雅之、前澤宏一
    • Organizer
      平成21年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山県立大学
    • Year and Date
      20101121-20101122
  • [Presentation] Growth of InSb films on a Si(001) substrate with V-shaped grooves via the InSb bi-layer2010

    • Author(s)
      S. Khamseh, K. Nakatani, T. Iwasugi, K. Nakayama, A. Kadota, M. Mori, K. Maezawa
    • Organizer
      2009年(平成21年)秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      20100908-20100911
  • [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜のヘテロエピタキシャル成長2009

    • Author(s)
      上田広司、斉藤光史、中谷公彦、森雅之、前澤宏一
    • Organizer
      平成20年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      金沢工業大学
    • Year and Date
      20091121-20091122
  • [Presentation] V字型の(111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2009

    • Author(s)
      岩杉達矢、森雅之、斉藤光史、五十嵐弘樹、N.B. Ahmad、村田和範、前澤宏一
    • Organizer
      平成20年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      金沢工業大学
    • Year and Date
      20091121-20091122
  • [Presentation] Surface reconstruction assisted growth of InSb films on V-grooved Si(001) substrate International Symposium on Quantum Nanophotonics2009

    • Author(s)
      M. Mori, S. Khamseh, T. Iwasugi, K. Nakatani, K. Maezawa
    • Organizer
      ISQNN2009
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20091118-20091120
  • [Presentation] InSb films grown the V-grooved Si(001) substrate with InSb bi-layer2009

    • Author(s)
      M. Mori, S. Khamseh, T. Iwasugi, K. Nakatani, K. Murata, M. Saito, K. Maezawa
    • Organizer
      14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20090713-20090717
  • [Presentation] Heteroepitaxial growth of InSb films on the patterned Si(001) substrate2009

    • Author(s)
      T. Iwasugi, M. Mori, H. Igarashi, K. Murata, M. Saito, K. Maezawa
    • Organizer
      14th International Conference on Narrow Gap Semiconductors and Systems (NGSS-14)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20090713-20090717
  • [Presentation] Si(111)-√7×√3-In表面再構成を介したInSb薄膜のヘテロエピタキシャル成長とその結晶性及び配向性の評価2008

    • Author(s)
      長島恭兵、上田広司、斉藤光史、森雅之、丹保豊和、前澤宏一
    • Organizer
      平成19年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山大学工学部
    • Year and Date
      20081130-20081201
  • [Presentation] InSb単分子層/Si(111)上へのAlSb層の成長2008

    • Author(s)
      新村康成、水谷文也、吉田達雄、上田広司、斉藤光史、森雅之、前澤宏一
    • Organizer
      平成19年度応用物理学会北陸・信越支部学術講演会
    • Place of Presentation
      富山大学工学部
    • Year and Date
      20081130-20081201
  • [Presentation] Heteroepitaxial growth of InSb films on V-grooved Si(001) substrate2008

    • Author(s)
      M. Mori, M. Saito, H. Igarashi, T. Iwasugi, N.B. Ahmad, K. Maezawa
    • Organizer
      5th International Symposium on Surface Science and Nanotechnology (ISSS-5)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20081109-20081113
  • [Presentation] High quality InSb films grown on Si(111) substrate via InSb bi-layer2008

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, C. Tatsuyama, K. Maezawa
    • Organizer
      8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20081019-20081023
  • [Presentation] Inprovement of rotated InSb films by additional In adsorption onto initial InSb bi-layer2008

    • Author(s)
      M. Saito, M. Mori, C. Tatsuyama, K. Maezawa
    • Organizer
      8th Japan-Russia Seminar on Semiconductor Surfaces (JRSSS-8)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      20081019-20081023
  • [Presentation] Heteroepitaxial growth of rotated AlInSb layer mediated by InSb bi-layer on Si(111) substrate2008

    • Author(s)
      M. Saito, M. Mori, K. Ueda, K. Nakatani, K. Maezawa
    • Organizer
      35th International Symposium on Compound Semiconductors (ISCS2008)
    • Place of Presentation
      Rust, Germany
    • Year and Date
      20080921-20080924
  • [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      中谷公彦、斉藤光史、上田広司、森雅之、前澤宏一
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      20080902-20080905
  • [Presentation] ノルスルヤティビンティアハマド、前澤宏一, (111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長2008

    • Author(s)
      五十嵐弘樹、森雅之、斉藤光史、岩杉達矢
    • Organizer
      2008年(平成20年)秋季第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      20080902-20080905
  • [Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate via InSb bi-layer2008

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Yoshida, Y. Shinmura, K. Maezawa
    • Organizer
      15th International Conference on Molecular Beam Epitaxy (MBE2008)
    • Place of Presentation
      Vancouver, Canada
    • Year and Date
      20080803-20080808
  • [Presentation] Effect of In and Sb monolayers to form rotated InSb films on Si(111) substrate2007

    • Author(s)
      M. Saito, M. Mori, K. Maezawa
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20071112-20071115
  • [Presentation] Domain structure of InSb films grown on Si(111) substrate2007

    • Author(s)
      K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa
    • Organizer
      th International Symposium on Control of Semiconductor Interfaces (ISCSI-5)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      20071112-20071115
  • [Presentation] Heteroepitaxial InSb films grown via Si(111)-√7x√3-In surface reconstruction2007

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, Y. Yamashita, C. Tatsuyama, T. Tambo, K. Maezawa
    • Organizer
      34th International Symposium on Compound Semiconductors (ISCS2007)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      20070915-20070918
  • [Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate by inserting AlSb buffer layer2007

    • Author(s)
      K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa
    • Organizer
      34th International Symposium on Compound Semiconductors (ISCS2007)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      20070915-20070918
  • [Presentation] Si(111)-√7×√3-In表面再構成を介したInSb薄膜のヘテロエピタキシャル成長2007

    • Author(s)
      長島恭兵、斉藤光史、森雅之、丹保豊和、前澤宏一
    • Organizer
      2007年(平成19年)秋季第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Year and Date
      20070904-20070908
  • [Presentation] Heteroepitaxial growth of InSb films on a Si(111) substrate with√7x√3-In surface reconstruction2007

    • Author(s)
      M. Mori, M. Saito, K. Nagashima, K. Ueda, T. Tambo, C. Tatsuyama, K. Maezawa
    • Organizer
      2nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2007)
    • Place of Presentation
      Nagano, Japan
    • Year and Date
      20070619-20070622
  • [Presentation] V字型(111)面パターンを形成したSi(100)基板上へのInSb薄膜のヘテロエピタキシャル成長

    • Author(s)
      岩杉達矢、森雅之、斉藤光史、五十嵐弘樹、村田和範、前澤宏一
    • Organizer
      春季第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      00000330-00000402
  • [Presentation] InSb単分子層を介したSi(111)基板上のAlInSb薄膜の成長

    • Author(s)
      斉藤光史、森雅之、上田広司、吉田達雄、新村康成、前澤宏一
    • Organizer
      春季第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学船橋キャンパス
    • Year and Date
      00000327-00000330
  • [Remarks]

    • URL

      http://www3.u-toyama.ac.jp/nano/

  • [Remarks]

    • URL

      http://www3.u-toyama.ac.jp/morimasa/

URL: 

Published: 2011-06-18   Modified: 2016-04-21  

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