Development of Properties and Functionalities by Precise Control of Rare-Earth Doping

2011 Fiscal Year Final Research Report

• Project/Area Number: 19GS1209
• Research Category: Grant-in-Aid for Creative Scientific Research
• Allocation Type: Single-year Grants
• Research Institution: Osaka University
• Principal Investigator: FUJIWARA Yasufumi 大阪大学, 大学院・工学研究科, 教授 (10181421)
• Co-Investigator(Kenkyū-buntansha): TERAI Yoshikazu 大阪大学, 大学院・工学研究科, 講師 (90360049) ; NISHIKAWA Atsushi 大阪大学, 大学院・工学研究科, 助教 (60417095) ; ICHIDA Hideki 大阪大学, 先端科学イノベーションセンター, 助教 (50379129) ; ASAHI Hajime 大阪大学, 産業科学研究所, 教授 (90192947) ; HASEGAWA Shigehiko 大阪大学, 産業科学研究所, 准教授 (50189528) ; EMURA Shuichi 大阪大学, 産業科学研究所, 助教 (90127192) ; ZHOU Ikai 大阪大学, 産業科学研究所, 助教 (60346179) ; OHTA Hitoshi 神戸大学, 自然科学研究系先端融合研究環分子フォトサイエンス研究センター, 教授 (70194173) ; OHKUBO Susumu 神戸大学, 自然科学研究系先端融合研究環分子フォトサイエンス研究センター, 助教 (80283901)
• Project Period (FY): 2007 – 2011
• Keywords: 希土類元素 / オプトロニクス / スピントロニクス

Research Abstract

We have doped rare-earth(RE) elements to III-V semiconductors using atomically-controlled crystal-growth techniques and investigated luminescent and magnetic properties due to RE ions. Ultrafast energy transfer from the host to RE ions was revealed in the materials. The first demonstration of red emission was succeeded in a nitride-based light-emitting diode with Eu-doped GaN. The room-temperature ferromagnetism was proved to be induced by carriers. The feasibility to develop new opto-magnetic devices was also confirmed.

Research Products

• [Journal Article] Eu luminescence center created by Mg codoping in Eu-doped GaN (2012)
  • Author(s): D. Lee, A. Nishikawa, Y. Terai, and Y. Fujiwara
  • Journal Title: Applied Physics Letters Volume: 100 Pages: 171904/ 1-3
  • DOI: DOI:10.1063/1.4704920
  • Peer Reviewed
• [Journal Article] Optical and magnetic properties in epitaxial GdN thin film (2011)
  • Author(s): H. Yoshitomi, S. Kitayama, T. Kita, O. Wada, M. Fujisawa, H. Ohta, and T. Sakurai
  • Journal Title: Physical Reviews B Volume: 83 Pages: 155202/ 1-7
  • DOI: DOI:10.1103/PhysRevB.83.155202
  • Peer Reviewed
• [Journal Article] ESR study of photoluminescent material GaAs : Er, O-Er concentration effect- (2011)
  • Author(s): M. Fujisawa, A. Asakura, F. Elmasry, S. Okubo, H. Ohta, and Y. Fujiwara
  • Journal Title: Journal of Applied Physics Volume: 109 Pages: 053910/ 1-5
  • DOI: DOI:10.1063/1.3556453
  • Peer Reviewed
• [Journal Article] Energy structure of Er-2O center in GaAs : Er, O studied by high magnetic field photoluminescence measurement (2011)
  • Author(s): H. Katsuno, H. Ohta, O. Portugall, N. S. Ubrig, M. Fujisawa, F. Elmasry, S. Okubo, and Y. Fujiwara
  • Journal Title: Journal of Luminescence Volume: 131 Pages: 2294-2298
  • DOI: DOI:10.1063/1.35
  • Peer Reviewed
• [Journal Article] Excitation of Eu3+ in gallium nitride epitaxial layers : Majority versus trap defect center (2011)
  • Author(s): N. Woodward, J. Poplawsky, B. Mitchell, A. Nishikawa, Y. Fujiwara, and V. Dierolf
  • Journal Title: Applied Physics Letters Volume: 98 Pages: 011102/ 1-3
  • DOI: DOI:10.1063/1.35
  • Peer Reviewed
• [Journal Article] Lattice site location of optical centres in GaN : Eu LED material grown by organometallic vapor phase epitaxy (2010)
  • Author(s): K. Lorenz, E. Alves, I. S. Roqan, K. P. O' Donnell, A. Nishikawa, Y. Fujiwara, and M. Bockowski
  • Journal Title: Applied Physics Letters Volume: 97 Pages: 111911/ 1-3
  • DOI: DOI:10.1063/1.3489103
  • Peer Reviewed
• [Journal Article] Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy (2010)
  • Author(s): A. Nishikawa, N. Furukawa, T. Kawasaki, Y. Terai, and Y. Fujiwara
  • Journal Title: Applied Physics Letters Volume: 97 Pages: 051113/ 1-3
  • DOI: DOI:10.1063/1.3478011
  • Peer Reviewed
• [Journal Article] 希土類添加半導体の現状と将来展望 (2010)
  • Author(s): 藤原康文、西川敦、寺井慶和
  • Journal Title: 応用物理 Volume: 79 Pages: 25-31
  • Peer Reviewed
• [Journal Article] Room-temperature red emission from a p-type/ europium-doped/ n-type gallium nitride light-emitting diode under current injection (2009)
  • Author(s): A. Nishikawa, T. Kawasaki, N. Furukawa, Y. Terai, and Y. Fujiwara
  • Journal Title: Applied Physics Express Volume: 2 Pages: 071004/ 1-3
  • DOI: DOI:10.1143/APEX.2.071004
  • Peer Reviewed
• [Journal Article] Ultrafast carrier-capturing in GaInP/ Er, O-codoped GaAs/ GaInP laser diodes grown by organometallic vapor phase epitaxy (2008)
  • Author(s): Y. Terai, K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi, and Y. Fujiwara
  • Journal Title: Applied Physics Letters Volume: 93 Pages: 231117/ 1-3
  • DOI: DOI:10.1063/1.3046784
  • Peer Reviewed
• [Journal Article] Large magnetization in high Gd concentration GaGdN and Si-doped GaGdN grown at low temperatures (2008)
  • Author(s): Y. K. Zhou, S. W. Choi, S. Emura, S. Hasegawa, and H. Asahi
  • Journal Title: Applied Physics Letters Volume: 92 Pages: 062505/ 1-3
  • DOI: DOI:10.1063/1.2841657
  • Peer Reviewed
• [Journal Article] Terahertz radiation from Er, O-codoped GaAs surface grown by organometallic vapor phase epitaxy (2008)
  • Author(s): K. Shimada, Y. Terai, S. Takemoto, K. Hidaka, Y. Fujiwara, M. Suzuki, and M. Tonouchi
  • Journal Title: Applied Physics Letters Volume: 92 Pages: 111115/ 1-3
  • DOI: DOI:10.1063/1.2901025
  • Peer Reviewed
• [Journal Article] Ultrafast carrier-trapping in Er-doped and Er, O-codoped GaAs revealed by pump and probe technique (2007)
  • Author(s): Y. Fujiwara, S. Takemoto, K. Nakamura, K. Shimada, M. Suzuki, K. Hidaka, Y. Terai, and M. Tonouchi
  • Journal Title: Physica B Volume: 401-402 Pages: 234-237
  • DOI: DOI:10.1016/j.physb.2007.08.155
  • Peer Reviewed
• [Presentation] Recent Progress in Red LEDs with Eu-doped GaN (2012)
  • Author(s): Y. Fujiwara, A. Nishikawa, and Y. Terai
  • Organizer: Optical Society of America Topical Meeting on Advances in Optical Materials(AIOM), ITh5B. 4
  • Place of Presentation: San Diego, USA
  • Year and Date: 2012-02-02
• [Presentation] Rare-earth doped III-nitride semiconductors for semiconductor spintronics (2011)
  • Author(s): H. Asahi, S. Hasegawa, Y. K. Zhou, and S. Emura
  • Organizer: 2011 European Materials Research Society Fall Meeting(E-MRS2011_Fall), IX3
  • Place of Presentation: Warsaw, Poland
  • Year and Date: 2011-09-19
• [Presentation] Growth and characterization of GaN-based dilute magnetic semicondcutors and their nanostructures (2011)
  • Author(s): S. Hasegawa, Y. K. Zhou, S. Emura, and H. Asahi
  • Organizer: 2011 Villa Conference on Interactions Among Nanostructures, Red Rock Red Rock Casino, Resort and Spa, Las Vegas
  • Place of Presentation: Nevada, USA
  • Year and Date: 2011-04-21
• [Presentation] Red light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy (2010)
  • Author(s): Y. Fujiwara, A. Nishikawa, and Y. Terai
  • Organizer: 15th International Workshop on Inorganic and Organic Electroluminescence & 2010 International Conference on the Science and Technology of Emissive Displays and Lighting & XVIII Advanced Display Technologies International Symposium, St
  • Place of Presentation: Petersburg, Russia
  • Year and Date: 2010-10-01
• [Presentation] Organometallic vapor phase epitaxial growth of Eu-doped GaN and its application to red light-emitting diodes operating at room temperature (2010)
  • Author(s): Y. Fujiwara, A. Nishikawa, and Y. Terai
  • Organizer: 3rd International Symposium on Growth of III-Nitrides(ISGN3), WE4-2
  • Place of Presentation: Montpellier, France
  • Year and Date: 2010-07-07
• [Presentation] Electron spin resonance study on Er, O-codoped GaAs (2008)
  • Author(s): H. Ohta, M. Fujisawa, M. Yoshida, and Y. Fujiwara
  • Organizer: 2008 Materials Research Society Fall Meeting(MRS2008_Fall), D1. 1
  • Place of Presentation: Boston, USA
  • Year and Date: 2008-12-01
• [Presentation] Injection-type 1. 5. m light-emitting diodes with Er, O-codoped GaAs exhibiting extremely temperature-stable emission wavelength (2008)
  • Author(s): Y. Fujiwara
  • Organizer: 3rd International Conference on Optical, Optoelectronic and Photonic Materials and Applications
  • Place of Presentation: Edmonton, Canada
  • Year and Date: 2008-07-23
• [Presentation] Ultrafast carrier-trapping in Er-doped and Er, O-codoped GaAs revealed by pump and probe transmission technique (2007)
  • Author(s): Y. Fujiwara, S. Takemoto, M. Suzuki, K. Shimada, K. Hidaka, Y. Terai, and M. Tonouchi
  • Organizer: 24th International Conference on Defects in Semiconductors(ICDS24), TO4-4
  • Place of Presentation: Albuquerque, USA
  • Year and Date: 2007-07-24
• [Book] Materials Research Society Symposium Proceedings Vol.1342, Rare-Earth Doping of Advanced Materials for Photonic Applications (2012)
  • Author(s): V. Dierolf, Y. Fujiwara, T. Gregorkiewicz, and W. M. Jadwisienczak
  • Total Pages: 119
  • Publisher: (Cambridge University Press, New York
• [Book] Materials Research Society Symposium Proceedings Vol.1111, Rare-Earth Doping of Advanced Materials for Photonic Applications (2009)
  • Author(s): V. Dierolf, Y. Fujiwara, U. Hommerich, P. Ruterana, and J. M. Zavada
  • Total Pages: 297
  • Publisher: Materials Research Society, Pennsylvania
• [Remarks] 藤原康文:平成23年国立大学法人大阪大学功績賞(研究部門)(大阪大学)、2011年8月1日受賞
• [Remarks] 朝日一:平成23年国立大学法人大阪大学功績賞(研究部門)(大阪大学)、2011年8月1日受賞
• [Remarks] 西川敦、川崎隆司、古川直樹、寺井慶和、藤原康文:第32回応用物理学会優秀論文賞(応用物理学会)、2010年9月14日受賞
• [Remarks] H. Asahi : IPRM Award(IEEE Photonics Society)、2010年6月1日受賞
• [Remarks] 藤原康文:平成21年度国立大学法人大阪大学教育・研究功績賞(大阪大学)、2010年2月16日受賞
• [Remarks] H. Ohta : 2008 International EPR Society Silver Medal for Instrumentation(International EPR Society)、2008年7月16日受賞
• [Remarks] 「光るレアアース赤色LED見えた」、読売新聞朝刊(科学欄)、2011年10月24日新聞報道
• [Remarks] 「世界で初、新型赤色LED」、朝日小学生新聞、2009年7月4日新聞報道
• [Remarks] 「毒性ない赤色LED阪大作製、世界で初成功」、毎日新聞、2009年7月1日新聞報道
• [Remarks] 「世界初赤色LED成功阪大教授ら窒化ガリウムから」、読売新聞、2009年7月1日新聞報道
• [Remarks] 「赤色LED青・緑と同材料で試作阪大チーム既存の技術利用」、日経産業新聞、2009年7月1日新聞報道
• [Remarks] 「阪大、赤色LED作製3ボルトの電圧で発光窒化物半導体を使用」、日刊工業新聞、2009年7月1日新聞報道
• [Remarks]
  • URL: http://www.mat.eng.osaka-u.ac.jp/mse6/gakujyutsu.html
• [Patent(Industrial Property Rights)] 赤色発光半導体素子とその製造方法 (2011)
  • Inventor(s): 藤原康文、西川敦、寺井慶和
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 特許、特願2011-268143
  • Filing Date: 2011-12-07
• [Patent(Industrial Property Rights)] 赤色発光半導体素子とその製造方法 (2011)
  • Inventor(s): 藤原康文、西川敦、寺井慶和
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 特許、特願2011-268141
  • Filing Date: 2011-12-07
• [Patent(Industrial Property Rights)] 赤色発光素子および赤色発光素子の製造方法 (2009)
  • Inventor(s): 西川敦、藤原康文、寺井慶和、川崎隆志、古川直樹
  • Industrial Property Rights Holder: 大阪大学
  • Industrial Property Number: 特許、特願2009-112535
  • Filing Date: 2009-05-07