2022 Fiscal Year Final Research Report
Fabrication and Characterization of High-density Superatom-like Ge-core/Si-shell Quantum Dot for Light Emission
Project/Area Number |
19H00762
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Review Section |
Medium-sized Section 21:Electrical and electronic engineering and related fields
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Research Institution | Nagoya University |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
大田 晃生 名古屋大学, 工学研究科, 助教 (10553620)
洗平 昌晃 名古屋大学, 未来材料・システム研究所, 助教 (20537427)
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Project Period (FY) |
2019-04-01 – 2023-03-31
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Keywords | 量子ドット / コアシェル / 発光デバイス |
Outline of Final Research Achievements |
We fabricated high-density Si-QDs with Ge core and studied their luminescence properties. Photoluminescence from the Si-QDs with Ge core was observed at room temperature in the near-infrared region, being attributed to radiative-recombination between quantized states in the Ge core with deep potential well for holes. We also designed and fabricated light emitting diodes having the Si-QDs with Ge core and observed a clear electroluminescence peaked at ~0.8eV under forward bias application of pulsed bias irrespective of pulse height in the range of -1~-4V. In addition to radiative recombination between higher order quantized states in the Ge core, the direct bandgap transition in Ge core may be involved in the EL signals.
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Free Research Field |
半導体工学
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Academic Significance and Societal Importance of the Research Achievements |
本研究では、Si-ULSIと親和性の高いプロセスを用いてGeコアSi量子ドットの高密度・一括形成技術を確立しており、技術的観点から極めて重要性な成果が得られていると言える。また、室温で安定したPLおよび低電圧駆動ELデバイスの実現は、シリコンフォトニクスにおいて実現が極めて困難とされているSi系発光デバイスの開発につながるものであり、飛躍的な進歩を遂げているシリコンULSI 技術をベースにSi 系量子ドットトランジスタやフローティングメモリデバイスを組み合わせて、将来の少数電子・少数光子を使った大規模な高度情報処理へと発展する可能性が極めて高い。
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