2022 Fiscal Year Final Research Report
Building of Technical Basis for fabrication of high-power AlN devices
| Project/Area Number |
19H02166
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | University of Tsukuba |
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Principal Investigator |
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| Project Period (FY) |
2019-04-01 – 2023-03-31
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| Keywords | AlN / パワーデバイス / イオン注入 / MOSFET / 高温デバイス / SBD / 不純物拡散 / 表面処理 |
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| Outline of Final Research Achievements |
For saving energy, low-loss and high-power devices are highly demanded. In 2019, we achieved the first demonstration of transistors with an aluminum nitride (AlN) channel. AlN is a semiconductor with the highest critical electric field and the largest bandgap energy. The fabrication of AlN devices is challenge toward the operation limits of semiconductor devices. However, the AlN devices have suffered from the high contact resistance and insufficient Schottky barrier height. In this work, we establish the fabrication process for AlN devices by making maximum use of the open facility in the Tsukuba area (Tsukuba University, AIST, and NIMS). As a unique method, we try to reduce the contact resistivity by focusing on the material property of AlN, which does not decompose even at 1600 degree C.
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| Free Research Field |
パワーデバイス
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| Academic Significance and Societal Importance of the Research Achievements |
AlNは、現在、素子動作可能な半導体中で、絶縁破壊電界強度とバンドギャップが最も大きい材料である。絶縁体に分類される時さえあるAlNを用いて高性能素子を作製することは、半導体材料の限界に挑戦する研究であり、学術的に意義深い。
AlN素子作製の技術基盤を構築することは、新規高耐圧素子用材料の分野開拓および普及に繋がる。AlNの物性を最大限生かした超高耐圧・高温素子動作に成功すれば、既に実用化されているSiCやGaNよりも優れた耐圧とオン損失を有する素子の実現が期待できる。回路の究極的な小型化と低消費電力化に繋がり、地球の温暖化抑制に貢献できることから、社会的にも意義深い。
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