2021 Fiscal Year Final Research Report
Research on Polarization-Controlled Ultra-Wide Bandgap Semiconductor Devices
| Project/Area Number |
19H02170
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 21050:Electric and electronic materials-related
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
上田 修 明治大学, 研究・知財戦略機構(生田), 研究推進員(客員研究員) (50418076)
池永 訓昭 金沢工業大学, 工学部, 准教授 (30512371)
蓮池 紀幸 京都工芸繊維大学, 電気電子工学系, 助教 (40452370)
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| Project Period (FY) |
2019-04-01 – 2022-03-31
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| Keywords | 酸化ガリウム / 強誘電体 / 単一ドメイン |
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| Outline of Final Research Achievements |
In this study, we investigated ferroelectric κ-Ga2O3 thin films for high-electron-mobility transistors. It shows a large polarization and hence high two-dimensional electron gas density, which makes it a highly promising candidate for low resistance power-switching applications. It is challenging to grow single-domain κ-Ga2O3 thin films using the conventional substrates. We proposed a novel substrate for obtaining single-domain κ-Ga2O3. The substrates allowed the growth of single-domain κ-Ga2O3 thin films. Furthermore, the lattice-mismatch exhibits as small as approximately 1 %. This small lattice-mismatch also allowed the growth of high-quality κ-Ga2O3 thin films. We believe that these results pave the way for the high-electron-mobility transistors with low on-resistance.
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| Free Research Field |
結晶工学
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| Academic Significance and Societal Importance of the Research Achievements |
本研究は新しい強誘電体かつ半導体であるκ-Ga2O3の結晶成長技術や基礎物性を明らかにする研究である。従来のGaNを大きく上回る分極の大きさや分極スイッチングは新しいパワースイッチングデバイスが実現できる可能性を有しており、その学術的意義は大きい。また、この大きな分極はより小さなオン抵抗が実現できるため、より低消費なスイッチング素子が実現できる。このより低消費なスイッチング素子は、超低消費電力社会に向けて大きな社会的意義があると考えている。
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