Development of spin-photon conversion device by ultra high quality epitaxial growth technology

2021 Fiscal Year Final Research Report

• Project/Area Number: 19H02181
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Iba Satoshi 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (90647059)
• Co-Investigator(Kenkyū-buntansha): 大野 裕三 筑波大学, 数理物質系, 教授 (00282012)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 電子スピン / レーザ / GaAs / スピン緩和 / 円偏光 / 量子井戸

Outline of Final Research Achievements

We have developed elemental technologies towards the realization of a novel semiconductor laser "spin laser" that oscillates with circularly polarized light by utilizing an electron spin-to-photon conversion mechanism, and have achieved the following results. (i) We proposed a superlattice structure consisting of (110)-oriented tunnel-coupled quantum wells as a new spin transport layer, and demonstrated a long spin lifetime in the structure. (ii) We established a high-quality crystal growth technique for (110)-oriented InGaAs/AlGaAs quantum well active layers. (iii) Spin injection electrodes consisting of a magnetic metal/tunnel barrier layer were formed on the (110)-oriented LED structure, and electrical spin injection into the LED active layer was successfully achieved.

Free Research Field

スピントロニクス

Academic Significance and Societal Importance of the Research Achievements

本研究で開発したスピンレーザの基盤技術を基に、今後、高性能なスピンレーザが実現され、光通信やセンシングなど様々な領域でスピンレーザが次世代光源として利活用されることが期待される。また、(110)面超格子構造におけるスピン寿命の構造依存性などスピン物性を初めて明らかにすることもでき、学術的にも興味深い知見を得ることができた。