2021 Fiscal Year Final Research Report
Research and development on novel-semiconductor nanowire light emitting devices towards next-generation smart devices
Project/Area Number |
19H02573
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Review Section |
Basic Section 28050:Nano/micro-systems-related
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Research Institution | Osaka University |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
市川 修平 大阪大学, 超高圧電子顕微鏡センター, 助教 (50803673)
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Project Period (FY) |
2019-04-01 – 2022-03-31
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Keywords | ナノワイヤ / 有機金属気相エピタキシャル法 / 希土類添加半導体 / 赤色LED / フレキシブルデバイス |
Outline of Final Research Achievements |
In order to realize a super smart society, we established the growth technology of nanowires based on wide-gap compound semiconductors (nitride semiconductors and zinc oxide) and the technology to form rare-earth-doped films on the core nanowires. We also studied optical and structural characteristics to understand detailed physics of the fabricated nanowire materials. In addition to establishing a technology for forming rare earth-doped semiconductor films on the nanowires with high efficiency, we have succeeded in observing room temperature red luminescence which is comparable to conventional film structures by optimizing growth conditions. In addition, we have established current injection technology and process technology to realize room temperature red luminescence by embedding nitride semiconductor nanowires in polydimethylsiloxane, a flexible resin.
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Free Research Field |
半導体ナノ構造
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Academic Significance and Societal Importance of the Research Achievements |
本研究は超スマート社会実現に向けた新材料半導体ナノワイヤ発光素子の要素技術開発として、デバイス素子を飛躍的に小型化でき可視光で動作可能なワイドギャップ半導体ナノワイヤ構造に注目し、本構造に機能性材料である希土類添加半導体を組み合わせる研究課題である。本研究を通じて極めて色純度の高く発光波長がぶれない赤色発光するナノワイヤ構造の実現に成功するだけでなく、電流注入構造やフレキシブル基板への転写技術を開発する等、無機半導体をベースにしたフレキシブルなスマートデバイス実現に向けた要素技術は確立したと言え、極めて学術的・社会的意義は高い。
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