Research on high performance flexible thermoelectric device focusing on heat transport in amorphous oxide semiconductor

2021 Fiscal Year Final Research Report

• Project/Area Number: 19H02601
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 29020:Thin film/surface and interfacial physical properties-related
• Research Institution: Nara Institute of Science and Technology
• Principal Investigator: Uraoka Yukiharu 奈良先端科学技術大学院大学, 先端科学技術研究科, 教授 (20314536)
• Co-Investigator(Kenkyū-buntansha): 上沼 睦典 奈良先端科学技術大学院大学, 先端科学技術研究科, 准教授 (20549092) ; Bermundo J.P.S 奈良先端科学技術大学院大学, 先端科学技術研究科, 助教 (60782521) ; 石河 泰明 奈良先端科学技術大学院大学, 先端科学技術研究科, 准教授 (70581130)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 熱電変換素子 / 酸化物半導体 / 薄膜半導体 / 原子層堆積法 / 半導体デバイス

Outline of Final Research Achievements

We proposed a thermoelectric conversion element using a new thin film material for the purpose of utilizing waste heat in the low temperature region of 200 ° C or less. The material used is an oxide semiconductor such as InGaZnO, which has high mobility even if it is amorphous, can be formed into a thin film at a low temperature, and can be formed by a liquid process. Therefore, from the viewpoints of "crystallineity", "formation process method", and "device structure", we systematically proceed with experiments and create new ideas such as a three-dimensional periodic nanostructure process that enables further reduction of thermal conductivity. The physics of heat transfer in an amorphous oxide thin film was clarified by adding, and at the same time, the principle was verified by demonstrating the operation of a flexible thermoelectric element.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

地球温暖化の防止にむけて、再生エネルギーの研究は喫緊の課題である。本研究では、熱を電気に変換し、電子機器の電源に活用する半導体プロセスや半導体素子の研究を行った。特に、酸化物半導体は、提案形成が可能、電気特性が優れるといった特長を有している。本研究では、酸化物半導体を活用して、効率の高い、使いやすい熱電変換素子の研究を行い、有意義な研究成果を得た。