Development of semiconductor laser pumped nitride semiconductor waveguide nonlinear optical devices for squeezed light generation

2022 Fiscal Year Final Research Report

• Project/Area Number: 19H02631
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 30020:Optical engineering and photon science-related
• Research Institution: Osaka University
• Principal Investigator: Uemukai Masahiro 大阪大学, 大学院工学研究科, 助教 (80362672)
• Co-Investigator(Kenkyū-buntansha): 片山 竜二 大阪大学, 大学院工学研究科, 教授 (40343115)
• Project Period (FY): 2019-04-01 – 2023-03-31
• Keywords: 窒化物半導体 / 半導体レーザ / 非線形光学デバイス / 量子情報処理

Outline of Final Research Achievements

400 nm band semiconductor lasers using a high-order deep groove DBR grating and periodically slotted structure, which can be fabricated by a relatively simple process without high-resolution lithography and crystal regrowth, were fabricated and evaluated. From the latter, single-mode oscillation and tunable characteristics were obtained for the first time in this wavelength band.
In addition, novel waveguide nonlinear optical device with vertical polarity inversion of nitride semiconductors were designed and fabricated, and second harmonics generations were confirmed in a wide wavelength range of 229~438 nm. A grating input coupler that couples a pump light to a high-order mode guided light required for squeezed light generation in the structure was developed.

Free Research Field

光工学・光量子科学

Academic Significance and Societal Importance of the Research Achievements

光集積デバイスの光源となりうるInGaN波長可変単一モードレーザの開発に成功したことから、波長変換デバイスや導波路型マッハツェンダー干渉計などと1チップに集積した小型で高機能なモノリシック光集積デバイスの実現に向け前進したといえる。
また窒化物半導体の極性を反転して積層した新規構造導波路型非線形光学デバイスの設計・作製手法を確立するとともに、超短パルスレーザ励起においてウォークオフを考慮した理論値が実験値と比較的一致するなど評価手法においても多くの知見を得た。