Development of Innovative Gate Insulators Solving Trade-Off Properties by Beads-On-String-Shape Design

2021 Fiscal Year Final Research Report

• Project/Area Number: 19H02764
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 35010:Polymer chemistry-related
• Research Institution: Kyoto Institute of Technology
• Principal Investigator: Naka Kensuke 京都工芸繊維大学, 分子化学系, 教授 (70227718)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: かご型シルセスキオキサン / ゲル化 / 表面改質剤 / 紫外線耐性 / ゲート絶縁膜

Outline of Final Research Achievements

This study has conducted to create innovative organic gate insulators based on POSS main-chain polymers by polymerization of bifunctional POSS monomers with various comonomers by systematically change their structures. This study was also to clarify the molecular-level mechanism of physical cross-linking derived from their bead-on-string-shaped structures and to develop an innovative material design strategy that resolves the trade-off between properties that cannot be achieved with existing polymers. In this project the relationship between the structures and rheological properties of the resulting polymers has clarified the physical interactions originating from the bead-on-string-shaped structures consisting of the hydrophobic blocks (POSS) and the polar linker units. The potential applications of the resulting polymers in transparent resins with high thermal conductivity, surface modifiers, and UV-resistant materials were also identified.

Free Research Field

高分子化学

Academic Significance and Societal Importance of the Research Achievements

塗布形成法による有機TFT構成層のゲート絶縁膜として既存の高分子材料が検討されているが課題は多く、革新的材料の開発が求められている。これらに対して本研究では二官能性かご型シルセスキオキサン(POSS)モノマーを用いて得られる数珠玉構造高分子はキャストのみで耐溶剤性に加えて柔軟性と機械的強度、および熱耐性を有し、かさ高い疎水性ブロックのため、平滑で表面エネルギーが低い薄膜が得られる点で著しい優位性を有している。さらに分子設計容易性のため、高い絶縁性と高誘電性との両立など、既存の高分子材料では達成できない物性間のトレードオフを解消した革新的材料設計戦略への展開が期待できる創造性を有する。