2023 Fiscal Year Final Research Report
Development of a germanium spin MOSFET
| Project/Area Number |
19H05616
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (S)
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Broad Section C
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
Hamaya Kohei 大阪大学, 大学院基礎工学研究科, 教授 (90401281)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
澤野 憲太郎 東京都市大学, 理工学部, 教授 (90409376)
山本 圭介 九州大学, 総合理工学研究院, 准教授 (20706387)
|
|---|
| Project Period (FY) |
2019-06-26 – 2024-03-31
|
| Keywords | ゲルマニウム / スピン注入 / スピンMOSFET |
|---|
| Outline of Final Research Achievements |
The purpose of this project is to demonstrate Ge spin MOSFETs on a Si platform by integrating the "spin injection into semiconductors technology" developed by a representative spintronics researcher and the "Ge channel formation technology" and "low-temperature gate stack structure fabrication technology" developed by co-researchers who are semiconductor researchers. We have established the formation technology of ultra-high quality ferromagnetic alloy/Ge heterointerface, and dramatically improved the performance of non-volatile memory operation in semiconductor devices compared to conventional devices. The effectiveness of applying strain to the semiconductor channels was also clarified even at room temperature. Finally, we were able to achieve results such as spin injection into quantum wells and demonstration of spin MOSFETs.
|
| Free Research Field |
半導体スピントロニクス
|
| Academic Significance and Societal Importance of the Research Achievements |
AI技術の普及が進み，全消費電力に占める半導体デバイスの消費電力の割合が増大し始めていることから，将来の地球環境の問題にまで発展する懸念がある．本研究は，その半導体の低消費電力化技術として期待され，磁石のメモリ機能を利用した新しい半導体デバイスを開発する「半導体スピントロニクス」という分野の先端研究である。SiプラットフォームでのGeスピントランジスタの基本技術・基本学理が確立されつつあり，今後は「高性能化」に向けた更なる研究が必要である．
|
