2020 Fiscal Year Annual Research Report
Application of Single-walled Carbon Nanotube Coated by Boron Nitride Nanotubes in Field Emission Transistors
| Project/Area Number |
19J13441
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| Research Institution | The University of Tokyo |
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Principal Investigator |
柳 銘 東京大学, 工学系研究科, 特別研究員(PD)
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| Project Period (FY) |
2019-04-25 – 2021-03-31
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| Keywords | 1D heteronanotubes / SWCNT@BNNT / BNNT |
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| Outline of Annual Research Achievements |
The purpose of this project is to achieve the application of boron nitride coated single-walled carbon nanotubes in FET devices. We have sucessfully fabricated the device using our material. Moreover, We have also obtained high-purity and high-quality boron nitride nanotube film by removing carbon nanotubes in the heterostructure of carbon nanotube and boron nitride nanotube. Boron nitride nanotubes based heteronanotubes served as a promising platform for investigating the optical properties of transition metal dichalcogenide nanotubes, photoluminescence from molybdenum disulfide nanotubes was observed. The heteronanotubes of boron nitride nanotubes with molybdenum disulfide nanotubes have a great potential for the electronic device applications.
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| Research Progress Status |
令和2年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
令和2年度が最終年度であるため、記入しない。
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