Realizing far-infrared light emitting diodes based on the gate-induced p-n junction

2022 Fiscal Year Final Research Report

• Project/Area Number: 19K03692
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
• Research Institution: Fukuoka Institute of Technology
• Principal Investigator: Suzuki Kyoichi 福岡工業大学, 工学部, 准教授 (20393770)
• Project Period (FY): 2019-04-01 – 2023-03-31
• Keywords: ゲート生成p-n接合 / トポロジカル絶縁体 / 遠赤外ダイオード

Outline of Final Research Achievements

For the realization of far-infrared LEDs, by depositing a partial gate on the InAs/InGaSb topological insulator, we made the in-plane p-n junction. Although the light emission has not achieved, the band gap of 28.6 eV corresponding to the wavelength of 43 micron meters was confirmed from the electrical transport measurements. By applying the gate voltages from the surface and back sides independently, the energy difference in the p-n junction can be controlled. The current-voltage measurements across the p-n junction show the rectification features in the differential conductance.

Free Research Field

半導体物理学

Academic Significance and Societal Importance of the Research Achievements

従来のｐ-ｎ接合は、結晶成長時の不純物混入や成長後のイオン注入により作製されてきた。本研究で用いたゲートにより面内にp-n接合を作る技術はLEDや集積回路作成の可能性を広げるものである。本研究では、表面側と基板側のゲートを独立制御することで、精密にp-n接合の電位障壁を調整できることを示した。Type-IIヘテロ構造およびそのトポロジカル絶縁体は単体の半導体ではなし得ない微小なバンドギャップの実現が可能で、本研究の試みは新たな産業応用につながると考えている。