High accuracy simulation for conductive noise reduction on power converter using SiC device

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K04326
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21010:Power engineering-related
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: Kitagawa Wataru 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (30581805)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: EMI / SiCデバイス / 電力変換器 / 漏れ電流 / モデリング / シミュレーション

Outline of Final Research Achievements

The objective of this study is a modeling method to simulate conducted noise in SiC-MOSFET-based power converters with high accuracy. First, a modeling method for conducted noise is presented, in which a high-frequency equivalent circuit is derived from leakage current analysis by switching, impedance measurement, and derivation of LCR parameters. Furthermore, the EMI filter for the power supply was applied to the power converter, and the effectiveness of the inserted filter was verified by conducting the experiment again. Finally, two simulation methods, leakage current-based and impedance-based, are proposed. The usefulness and validity of the proposed methods are demonstrated by comparing the simulation and measurement results of noise terminal voltages using the two methods.

Free Research Field

電磁界数値解析

Academic Significance and Societal Importance of the Research Achievements

近年，電力変換器の普及に伴い，SiCデバイスのような電力用高速スイッチング素子が実用化され，広く普及していく。SiCデバイスは高効率で装置全体のパワー密度向上に大きく貢献する一方，スイッチングの高速化による高dv/dtが原因でEMIの問題が大きくなる。本研究による社会的意義としては，今後SiCデバイスを用いたシステムでの漏れ電流増大によるEMI問題の解決に対し，加速的に対策フィルタの開発/設計法の変革が進み，開発費の削減さらには価格の低下につながる。また，これら提案は，EMIモデリングに対する学術的分野の新方向性の開拓となり，新たな理論体系を構築し学術的意義をなす。