Elucidation of malfunction mechanisms occurring during switching periods of SiC devices

2022 Fiscal Year Final Research Report

• Project/Area Number: 19K04351
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21010:Power engineering-related
• Research Institution: Okayama University
• Principal Investigator: Hiraki Eiji 岡山大学, 環境生命自然科学学域, 教授 (20284268)
• Co-Investigator(Kenkyū-buntansha): 梅谷 和弘 岡山大学, 自然科学学域, 准教授 (60749323)
• Project Period (FY): 2019-04-01 – 2023-03-31
• Keywords: パワーエレクトロニクス / ワイドギャップ半導体デバイス / 誤動作

Outline of Final Research Achievements

Next-generation wide-bandgap power semiconductor devices, such as SiC and GaN, are expected to make significant contributions to the energy problem. However, their penetration into society has not progressed as much as initially anticipated. One major reason for this is the occurrence of malfunctions due to self-generated noise when attempting to maximize the "high-speed switching performance" inherent in these next-generation power semiconductor devices. It has been reported that the conventional approach of minimizing wire length, which is known to mitigate this issue, is often ineffective.
In this study, we have identified countermeasures against malfunctions that still occur even after making efforts to minimize wire length. Furthermore, we have established circuit implementation techniques to apply these countermeasures to practical devices.

Free Research Field

電力変換

Academic Significance and Societal Importance of the Research Achievements

パワー半導体デバイスの誤動作を電気回路的にモデリングし，誤動作の抑制条件を具体的な回路パラメータの設計条件として示すことで，従来の経験的な視点による対策では対処できなかった問題に対する明確な指針を示すことができた。この成果は，これからのパワーエレクトロニクス分野，ひいては地球規模でのエネルギー問題に大きく貢献することになるであろう。