TEM operand and first principles analysis of mechanisms of time-dependent oxide memristor properties

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K04468
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Osaka University
• Principal Investigator: Tohei Tetsuya 大阪大学, 基礎工学研究科, 准教授 (00463878)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 酸化物メモリスタ / 透過型電子顕微鏡その場観察 / 酸化チタン / 第一原理計算 / 抵抗変化現象 / 人工シナプス

Outline of Final Research Achievements

Oxide based memristors with time-dependent resistive change properties were studied by TEM operand experiments and theoretical calculations. By performing high resolution electron microscopy under voltage biasing conditions, we observed dynamic behavior of microstructural change in the resistive change devices at nanometer scale. We have discussed resistive change mechanisms based on oxygen vacancy behaviors. We also implemented time-dependent synaptic properties and associative learning by using multi-terminal memristive devices.

Free Research Field

ナノ構造解析

Academic Significance and Societal Importance of the Research Achievements

本研究の電子顕微鏡観察にもとづく解析の結果から，抵抗変化（メモリスタ）素子の特性発現の鍵となる動的な微細構造変化の詳細が明らかになった．これらの知見は，未だ不明な点が多いメモリスタ素子の動作機構の理解を深めるとともに，メモリスタの挙動をより微細な時空間スケールで制御するための指針になると考えられる．これにより，抵抗変化現象にもとづく高効率・高機能な新規不揮発メモリおよび人工シナプス素子の開発に役立つと期待される．