Novel Microscale Shape Memory Materials for Advanced Medical Applications Using Lead-Free Ferroelectrics

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K04479
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Oyama National College of Technology
• Principal Investigator: Imaizumi Fuminobu 小山工業高等専門学校, 機械工学科, 准教授 (10361205)
• Co-Investigator(Kenkyū-buntansha): 熊谷 勇喜 豊田工業高等専門学校, 電気・電子システム工学科, 准教授 (40824496)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 強誘電体 / スパッタリング

Outline of Final Research Achievements

With the increasing use of Internet of Things in various domains, which has led to an increase in the number of sensors being installed, it is indispensable to develop environment friendly sensor modules. Correspondingly, we investigated the formation of BiFeO3 films as a lead-free ferroelectric material on DyScO3 substrate. Experiments were performed to analyze the film formation process via the sputtering method, followed by heat treatment. Consequently, a BiFeO3 film was formed with a single (110) orientation, and two types of bonds (FeO and Fe2O3) were observed. Additionally, no issues related to adhesion or peeling were found. Thus, the developed BiFeO3 film can be potentially used as a ferroelectric material in various devices.
Keywords Piezoelectric material, BiFeO3 thin film

Free Research Field

電気電子材料

Academic Significance and Societal Importance of the Research Achievements

本研究で作製したBiFeO3薄膜は強誘電体材料であり、これまで強誘電体は鉛を含む材料が多かったがBiFeO3は鉛を含まないため、環境にやさしい材料である。本研究では、薄膜のBiFeO3薄膜を形成することに成功し、強誘電性、圧電性について調べることができた。特に薄膜としての強誘電性や、電圧印加時の変形量についても調べることができた。将来の強誘電体デバイス、圧電デバイスとして非常に有効な材料であると考える。