Study on high efficiency light emitting based on rare earth doped widegap oxide semiconductors

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K04492
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Saga University
• Principal Investigator: GUO QIXIN 佐賀大学, シンクロトロン光応用研究センター, 教授 (60243995)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 化合物半導体 / 希土類元素 / 発光特性

Outline of Final Research Achievements

We investigated the growth of rare earth doped oxide semiconductors and the excitation mechanism of the rare earth elements in order to realize high efficiency light emitting device whose emission wavelength does not depend on the environmental temperature. The Er doped oxide semiconductor films with different compositions were grown by pulsed laser deposition. The doping amount of Er was kept constant. The compositions and optical properties of the films were characterized by X-ray photoelectron spectroscopy and photoluminescence method. We found that light emission efficiency of the films increases with the increase of the bandgap. We also studied the crystal quality and optical properties of the Tm, Er, and Eu doped oxide multilayers, and demonstrated a white light emitting diode with excellent color rendering properties.

Free Research Field

電子材料

Academic Significance and Societal Importance of the Research Achievements

パルスレーザー堆積法を用いて高品質の希土類ドープ酸化物薄膜を作製し、薄膜の組成を変化させることにより、バンドギャップの制御に成功し、希土類元素の励起機構の解明に関する知見が得られたことは学術的に大きな意義がある。これにより、発光波長が環境温度に依存しない演色性に優れた白色発光ダイオードが実現され、照明やディスプレイ等に応用し、地球規模の省エネルギー化に貢献でき、社会的意義が極めて大きいと思われる。