Global Investigation of Electrical Damage Introduced into p-GaN Films by Plasma Ion Bombardments

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K04497
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Chubu University
• Principal Investigator: Nakano Yoshitaka 中部大学, 工学部, 教授 (60394722)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: p型GaN / プラズマイオン衝撃 / 電気的ダメージ / 欠陥準位 / 光容量過渡分光法

Outline of Final Research Achievements

In order to operate a GaN vertical power MOS transistor, which is expected as a next-generation power device, with a large current, it is needed to fabricate a three-dimensional device structure by reactive dry etching technology using plasma ions. In this case, however, electrical damage occurs due to the physical impact of plasma ions. In this study, we have systematically investigated the generation behavior of electrical damage caused by plasma ion impact on p-type GaN from the viewpoint of Mg acceptor concentration distribution and deep-level defect distribution, and clarified the plasma treatment time and UV irradiation dependence.

Free Research Field

半導体工学

Academic Significance and Societal Importance of the Research Achievements

本研究で得られた成果は電気的ダメージを排除する方向でプラズマ処理条件にフィードバックし、デバイスの高品質化・高信頼性化に向けたブレークスルーとなり得ることで学術的価値および実用上の価値が大きい。また、ノーマリーオフ動作のGaN縦型パワーMOSトランジスタの早期実用化へ繋がる。更に、欠陥準位の観点からプラズマ処理とデバイス特性・信頼性を結びつける研究成果であるため、材料・デバイス設計に実効的なボトムアップ提案が可能となり、GaN系電子デバイス分野の発展に大きく貢献できる。