Development of diamond electronic devices using AlN/diamond heterojunction

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K04501
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: National Institute for Materials Science
• Principal Investigator: IMURA Masataka 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主任研究員 (80465971)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 窒化アルミニウム / ダイヤモンド / 光デバイス / 電子デバイス / 有機金属化合物気相成長法 / マイクロ波プラズマ気相成長法 / ワイドギャップ半導体 / 窒化物半導体

Outline of Final Research Achievements

In this study, we improved the performance of diamond electronic devices using an aluminum nitride (AlN) / diamond pin structure and developed new functional devices. The high-crystalline-quality AlN layers were obtained on the diamond by adopting a growth temperature of 1300oC or higher using the metal-organic vapor phase epitaxy. In addition, the concentration of residual impurities in the AlN layers was controlled to be below the detection limit of SIMS. Under these conditions, the Si dopant was doped by increasing the Si concentration (flow rate) by one order of magnitude compared to the conventional method. Subsequently, current-voltage characteristics showed close to ohmic behavior by forming Ti / Al / Ti / Au electrodes on Si-doped AlN and performing post-annealing treatment at 750oC or higher in a nitrogen atmosphere.

Free Research Field

半導体デバイス

Academic Significance and Societal Importance of the Research Achievements

窒化アルミニウム(AlN)及びダイヤモンドは材料・物質特性の観点から究極のワイドギャップ半導体であり、これら材料を用いた半導体デバイスは、自動車・無線通信・宇宙開発、医療等の幅広い分野で応用が可能である。そのため、本研究課題で得られた成果は、21 世紀の基幹技術となる次世代光・電子デバイスの開発・活性化の一翼を担うものである。