Crystal growth of group III-V and group IV for mid-infrared silicon photonics

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K04515
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: University of Miyazaki
• Principal Investigator: Arai Masakazu 宮崎大学, 工学部, 准教授 (90522003)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 半導体 / 結晶成長 / 中赤外

Outline of Final Research Achievements

Mid-infrared light emitting diode (LED), laser and photodiode are strongly desired for optical gas absorption sensors. We experimentally investigated the continuous growth of group III and group VI materials in the same growth system. Also, we optimized the growth condition of InAsSb on GaAs substrate. Thermal annealing was effective to improve the emission intensity. We demonstrated the 3-micron range room temperature emission from n-GaAs/ i-InAs/ p-GaAs heterostructure. These technique is good candidate for mid-infrared silicon photonics.

Free Research Field

半導体デバイス工学

Academic Significance and Societal Importance of the Research Achievements

この研究はガスセンシングなどに有用な中赤外波長帯の発光・受光のための化合物半導体の結晶成長技術と、シリコン回路との融合に必要な技術検討である。シリコンなどのIV族（14族）と化合物半導体のIII-V族（13-15族）を同一の結晶成長装置内で連続して結晶成長する技術の開発を行った。また、中赤外波長帯で発光・受光する半導体素子の実現に成功した。