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2021 Fiscal Year Annual Research Report

Highly Stable Normally-off GaN-based transistors via Structures and Process

Research Project

Project/Area Number 19K04528
Research InstitutionUniversity of Fukui

Principal Investigator

ASUBAR JOEL  福井大学, 学術研究院工学系部門, 准教授 (10574220)

Co-Investigator(Kenkyū-buntansha) 葛原 正明  関西学院大学, 理工学部, 教授 (20377469)
Project Period (FY) 2019-04-01 – 2022-03-31
KeywordsNormally-off / Hi-K dielectric / AlGaN / GaN / HEMT
Outline of Annual Research Achievements

High-K ZrO2を用いて、安全性の高いノーマリオフ動作のAlGaN /GaN HEMT試作を作製し評価しました。 ZrO2 /AlGaNバリア/GaNチャネルデバイスは、高い正のしきい値電圧と電流を示しました。また、AlGaNバリアのAl組成がしきい値電圧に与える影響を系統的に調査し、Vthの制御におけるその役割を実証しました。
さらに、静電容量-電圧特性における堅牢なスピルオーバー現象の初めての測定から証明されるように、高品質のZrO2絶縁体/AlGaN界面を実証しました。これにより、より安定した高いドレイン電流値を達成する可能性があります。
また、AlGaN / GaN HEMTのゲート絶縁膜として、地球に優しいミストAl2O3絶縁体も適用しました。ミストAl2O3絶縁体を用いて、ノーマリオフでほとんどヒステリシスのない動作を初めて実証しました。
まだ改善の余地はありますが、最終年度には、ドレイン電流としきい値電圧の間のトレードオフを乗り越える、安全性と高性能のノーマリオフGaNベースのMIS-HEMTを実現しました。

  • Research Products

    (13 results)

All 2022 2021

All Journal Article (7 results) (of which Int'l Joint Research: 7 results,  Peer Reviewed: 7 results) Presentation (6 results) (of which Int'l Joint Research: 4 results)

  • [Journal Article] Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs2021

    • Author(s)
      Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
    • Journal Title

      IEEE Journal of Electron Devices

      Volume: 9 Pages: 570 - 581

    • DOI

      10.1109/JEDS.2021.3081463

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Stoichiometric imbalances in Mg-implanted GaN2021

    • Author(s)
      Kai C Herbert, Kazuki Shibata, Joel T Asubar, Masaaki Kuzuhara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Pages: 066504

    • DOI

      10.35848/1347-4065/ac0248

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] 5. Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques2021

    • Author(s)
      S Urano, RS Low, M Faris, M Ishiguro, I Nagase, A Baratov, JT Asubar, T Motoyama, Y Nakamura, Z Yatabe, M Kuzuhara
    • Journal Title

      2021 IEEE IMFEDK Tech. Dig.

      Volume: 2021 Pages: 1-2

    • DOI

      10.1109/IMFEDK53601.2021.9637639

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer2021

    • Author(s)
      S Maeda, I Nagase, A Baratov, S Urano, JT Asubar, A Yamamoto, M Kuzuhara
    • Journal Title

      2021 IEEE IMFEDK Tech. Dig.

      Volume: 2021 Pages: 1-2

    • DOI

      10.1109/IMFEDK53601.2021.9637576

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs2021

    • Author(s)
      Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T Asubar, Masaaki Kuzuhara
    • Journal Title

      2021 IEEE IMFEDK Tech. Dig.

      Volume: 2021 Pages: 1-2

    • DOI

      10.1109/IMFEDK53601.2021.9637625

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method2021

    • Author(s)
      M Ishiguro, S Urano, RS Low, M Faris, I Nagase, A Baratov, JT Asubar, T Motoyama, Y Nakamura, Z Yatabe, M Kuzuhara
    • Journal Title

      2021 IEEE IMFEDK Tech. Dig.

      Volume: 2021 Pages: 1-2

    • DOI

      10.1109/IMFEDK53601.2021.9637518

    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] 1. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions2021

    • Author(s)
      Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
    • Journal Title

      EEE Transactions on Electron Devices

      Volume: 68 Pages: 6059-6064

    • DOI

      10.1109/TED.2021.3119528

    • Peer Reviewed / Int'l Joint Research
  • [Presentation] Characterization of mist-Al2O3 gate insulator and its applications in mist-Al2O3/AlGaN/GaN MOS-HEMTs2022

    • Author(s)
      Tomohiro Motoyama, Shun Urano, Ali Baratov, Yusui Nakamura, Masaaki Kuzuhara, Joel T. Asubar, and Zenji Yatabe
    • Organizer
      The 69th Japan Society of Applied Physics Spring Meeting 2022
  • [Presentation] AlGaN/GaN MIS-HEMTs with mist- and ALD Al2O3 gate dielectric2022

    • Author(s)
      Shun Urano, Joel T. Asubar, Rui Shan Low, Faris Muhammad, Masaki Ishiguro, Itsuki Nagase, Ali Baratov, Tomohiro Motoyama, Yusui Nakamura, Masaaki Kuzuhara, and Zenji Yatabe
    • Organizer
      The 69th Japan Society of Applied Physics Spring Meeting 2022
  • [Presentation] Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method2021

    • Author(s)
      M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
    • Int'l Joint Research
  • [Presentation] Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer2021

    • Author(s)
      S. Maeda, I. Nagase, A. Baratov, S. Urano,J. T. Asubar, A. Yamamoto, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
    • Int'l Joint Research
  • [Presentation] Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs2021

    • Author(s)
      Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2021)
    • Int'l Joint Research
  • [Presentation] Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques2021

    • Author(s)
      S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe and M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2021)
    • Int'l Joint Research

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Published: 2022-12-28  

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