Direct measurement of charge transfer reactions for elucidating chemical mechanical polish dynamics in ultra-fine planarization processes

2022 Fiscal Year Final Research Report

• Project/Area Number: 19K05094
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 26050:Material processing and microstructure control-related
• Research Institution: Shizuoka University
• Principal Investigator: Suda Seiichi 静岡大学, 工学部, 教授 (50226578)
• Project Period (FY): 2019-04-01 – 2023-03-31
• Keywords: 化学機械研磨 / 電荷移動反応 / 水和層 / 電位変化 / ファインバブル

Outline of Final Research Achievements

Chemical reactions caused by polishing, which are referred to as chemical polishing, are essential for ultra-fine planarization technology. The technology realizes surface roughness lower than 1 nm. We tried to estimate the chemical polishing as an electrical signal derived from polishing and evaluate the hydration rate caused by polishing. We estimated the chemical polishing using fine-bubble abrasives, which we proposed as a novel abrasive material, as well as cerium oxides and colloidal silica. We then revealed that chemical polishing is one of the electrochemical reactions triggered by shear stress derived from polishing.

Free Research Field

材料化学

Academic Significance and Societal Importance of the Research Achievements

本研究は，精密工学分野，材料化学分野，電気化学分野を横断して，CMP特に化学研磨メカニズムの本質を明らかにしようとしているところに特色がある。これらの主として3分野を横断的に解析することによって，新たな研磨材料に関する学術分野を創成しようとするところが本研究の学術的な特色である。本研究成果によって，化学研磨特性に関する学術的な体系化を実現するとともに，高度CMP材料に関する学術分野を創成する。