2019 Fiscal Year Research-status Report
Exfoliation of intercalated silicene: Towards the fabrication of silicene-based devices
| Project/Area Number |
19K05204
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
フロランス アントワーヌ 北陸先端科学技術大学院大学, 先端科学技術研究科, 講師 (30628821)
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| Project Period (FY) |
2019-04-01 – 2022-03-31
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| Keywords | Silicene |
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| Outline of Annual Research Achievements |
The first year of the project was dedicated to preparatory work including the establishment of an optimized protocol for the fabrication of hexagonal boron nitride on zirconium diboride (h-BN/ZrB2) samples.
The main equipment required for these experiments, which is a glovebox, was selected, ordered and implemented in our laboratory. I also learned how to use scanning electronic microscopy and optical microscopy which are key instruments for the project. Possible collaborators for the growth of large scale h-BN/ZrB2 samples by chemical vapor epitaxy were contacted. I hired a special visiting student to initiate the experiments with the glovebox.
The possibility of fabricating h-BN/ZrB2 on silicon on insulator (SOI) substrates instead of silicon substrates was also considered as a promizing solution for the exfoliation of h-BN/silicene/ZrB2 sandwiches. Appropriate SOI susbstrates are about to be ordered together with the chemical etchants required to dissolve the ZrB2 thin film.
Preliminary test of mechanical exfoliation of GaSe layers by means of a scotch tape were also performed. They demonstrated the possibility of transfering thin film to an oxidized silicon substrate. However, the thickness is approximately 10 monolayers which indicates that efforts have to be dedicated to decrease the thickness down to a single layers. They also stress on the importance of methods to identify single layer among thicker layers.
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| Current Status of Research Progress |
Current Status of Research Progress
3: Progress in research has been slightly delayed.
Reason
The study of the growth of large scale hBN layer by chemical vapor deposition on zirconium diboride was planned to be initiated during the first year, in collaboration with the group of Karen Kavanaugh from Simon Frasier university (Vancouver, Canada). Unfortunately, her low-energy electron microscopy setup is not currently available due to a temporary failure. Alternative possible collaborations for such a study have to be found abroad. The COVID outbreak postpone further this study.
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| Strategy for Future Research Activity |
The following experiments will be carried out during the second year:
-The study of the exfoliation of 2D materials and the transfer to oxide-terminated silicon substrate will be resumed. The exfoliated materials will be analyzed by atomic force microscopy and optical microscopy. The objective is to develop methods to identify single layers among the exfoliated materials.
-The conditions for chemical etching of ZrB2 thin film without destroying the h-BN layer on top of it will be determined.
-The growth of h-BN/ZrB2 on SOI (silicon on insulator) substrate will be investigated.
-The study of the growth of h-BN by chemical vapor deposition.
The third year will be dedicate to the fabrication of devices made of silicene or GaSe monolayers.
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| Causes of Carryover |
Travelling plans were cancelled in reason of the corona virus outbreak. In particular, the visit of a visiting student was postponed to next year. If possible, travelling to conferences and to visit collaborators will also be resumed during the second year of the project.
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