2023 Fiscal Year Annual Research Report
Exfoliation of intercalated silicene: Towards the fabrication of silicene-based devices
| Project/Area Number |
19K05204
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
フロランス アントワーヌ 北陸先端科学技術大学院大学, 先端科学技術研究科, 特任准教授 (30628821)
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| Project Period (FY) |
2019-04-01 – 2024-03-31
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| Keywords | silicene / exfoliation / transfer / h-BN / ZrB2 / silicon-on-insulator |
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| Outline of Annual Research Achievements |
While the initial project was considering mechanical methods to exfoliate and transfer silicene/h-BN bilayer from the ZrB2 thin film it was grown on, an other approach was found to be more suitable: the exfoliation through a wet process: The ZrB2 thin film is grown on the silicon membrane of silicon on insulator substrate, which can then be exfoliated through the chemical etching of the oxide layer by a solution of hydrofluoride.
An other part of the project was the patterning of the silicene/h-BN bilayer through the patterning by e-beam lithography of the ZrB2 thin film before the formation of the bilayer. The possibility of this process involving the etching of the ZrB2 thin film by a solution of H3PO4, was demonstrated even though its conditions still need to be optimized.
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