2020 Fiscal Year Annual Research Report
Study on molybdenum disulfide layer growth on gallium nitride surface for high efficiency UV-visible photodetector
| Project/Area Number |
19K05267
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
カリタ ゴラップ 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (20615629)
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| Project Period (FY) |
2019-04-01 – 2021-03-31
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| Keywords | molybdenum disulfide / gallium nitride / CVD |
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| Outline of Annual Research Achievements |
In this research, we proposed to develop molybdenum disulfide (MoS2) and gallium nitride (GaN) heterostructure for short wavelength photodetector applications. In this prospect, we have studied the van der Waal heteroepitaxial growth of MoS2 film by chemical vapor deposition (CVD) method on the GaN surface. Synthesis of MoS2 triangular crystals was achieved on Ga-terminated GaN substrate by the CVD technique using the ammonium tetrathiomolybdate precursor. Growth of triangular crystals on the GaN substrate surface with same orientation was obtained by the CVD process. The growth of triangular crystals with same orientation is due to less lattice mismatched between the MoS2 layer and GaN. Further, the interface quality of the as-synthesized MoS2 crystals and GaN wafer is explored by X-ray photoelectron spectroscopy. A heterojunction device is fabricated with the synthesized MoS2 layer on GaN, showing excellent rectifying diode characteristics and a photovoltaic action with light illumination. This study reveals the suitability of the ammonia-containing ATM precursor for the growth of MoS2 crystals on GaN in the CVD process to obtain a suitable heterostructure for device applications. Again, the developed heterostructure can be significant for application in hydrogen generation considering the catalytic activities of MoS2 layers.
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