Improvement of device characteristics by elucidation of non-radiative defect formation mechanism in diamond crystals

2022 Fiscal Year Final Research Report

• Project/Area Number: 19K05293
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 30010:Crystal engineering-related
• Research Institution: Osaka University
• Principal Investigator: Maida Osamu 大阪大学, 大学院工学研究科, 助教 (40346177)
• Project Period (FY): 2019-04-01 – 2023-03-31
• Keywords: ダイヤモンド / 結晶欠陥 / ワイドギャップ

Outline of Final Research Achievements

The achievement of the growth of high-quality diamond films, which is expected as a potential material for next generation semiconductors, is of technological importance to diamond electronic devices. For the improvement of the crystal quality of diamond films, it is essential to investigate the nonradiative defects of the diamond films which have not been clarified in detail. In this study, we have fabricated an evaluation system for nonradiative defects by means of transient photocapacitance method, and characterized the boron-doped diamond films.

Free Research Field

半導体物性

Academic Significance and Societal Importance of the Research Achievements

次世代の半導体材料として期待されるダイヤモンド半導体結晶を含めたワイドバンドギャップ半導体材料の深い非輻射欠陥評価はこれまで積極的に行われておらず、その詳細はいまだ解明されていない。本研究は過渡光容量分光法を用いた非輻射欠陥評価系を構築し、ダイヤモンド半導体結晶の非輻射欠陥評価を行った。さらにその生成要因を解明し、結果を結晶合成にフィードバックすることで結晶品質の改善を図った。