2021 Fiscal Year Final Research Report
Development of calculation technique for defect control in semiconductors for power device application
Project/Area Number |
19K05294
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Review Section |
Basic Section 30010:Crystal engineering-related
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Research Institution | Okayama Prefectural University |
Principal Investigator |
Sueoka Koji 岡山県立大学, 情報工学部, 教授 (30364095)
|
Co-Investigator(Kenkyū-buntansha) |
山本 秀和 千葉工業大学, 工学部, 教授 (00581141)
中塚 理 名古屋大学, 工学研究科, 教授 (20334998)
|
Project Period (FY) |
2019-04-01 – 2022-03-31
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Keywords | パワーデバイス / 欠陥制御 / 計算手法 |
Outline of Final Research Achievements |
The main findings of this simulation study are (1) the void defect formation is suppressed by the interaction of nitrogen (N) and vacancy (V), and the dislocation formation is suppressed by the interaction of hydrogen (H) and self-interstitial (I)in IGBT MCZ-Si crystal, (2) the mechanism of formation of interstitial phosphorus (Pi) and stacking faults (SFs)in power MOS-FET Si crystal is clarified, and (3) V(N)-I(N) pair is more stable than V(Ga)-I(Ga) pair in GaN crystal.
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Free Research Field |
応用物理学
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Academic Significance and Societal Importance of the Research Achievements |
本研究では,我々が開発した“箱庭法”をSi,SiC,GaNなどのパワーデバイス用半導体における原子レベルでの欠陥挙動の解明と制御に適用したが,このようなシミュレーションは報告がなく,学術的に高い意義がある.また,研究成果は産業界において,パワーデバイス用半導体結晶の品質改善や製品の開発加速に寄与するといった社会的意義も持つ.
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