2021 Fiscal Year Final Research Report
Development of free-standing nitride substrates using graphene
Project/Area Number |
19K05298
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Review Section |
Basic Section 30010:Crystal engineering-related
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Research Institution | National Institutes for Quantum Science and Technology |
Principal Investigator |
SASAKI TAKUO 国立研究開発法人量子科学技術研究開発機構, 関西光科学研究所 放射光科学研究センター, 主幹研究員 (90586190)
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Co-Investigator(Kenkyū-buntansha) |
日比野 浩樹 関西学院大学, 理工学部, 教授 (60393740)
山口 智広 工学院大学, 先進工学部, 教授 (50454517)
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Project Period (FY) |
2019-04-01 – 2022-03-31
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Keywords | 放射光利用 / X線回折 / 窒化物半導体 / MBE成長 |
Outline of Final Research Achievements |
In this study, in situ X-ray reciprocal space mapping measurements are carried out in the interface between nitride films and graphene substrates. We found that an insertion of the AlN buffer is very effective to improve the film quality and clarified the unique growth mechanisms of the films around the AlN islands. We also found the insertion of the double-buffer layers are useful to grow the high-quality InGaN films on graphene substrates. These results would lead to develop free-standing nitride substrates.
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Free Research Field |
放射光利用研究
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Academic Significance and Societal Importance of the Research Achievements |
本研究で得られた成果は、全In組成のInGaNデバイスをInGaN基板の上にホモエピタキシャル成長で形成できる自立基板の作製につながる特色あるものである。これにより、全発光波長域における高効率な発光デバイスの開発に資するだけでなく、ヘテロエピタキシャル成長を必要としない革新的な基板形成技術につながることが期待できる。
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