Elucidation of deprotonation induced mechanism in nano-and microfabrication process using ionizing radiations and its applications

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K05330
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 31010:Nuclear engineering-related
• Research Institution: Osaka University
• Principal Investigator: Okamoto Kazumasa 大阪大学, 産業科学研究所, 助教 (10437353)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: レジスト / 放射線化学 / リソグラフィ / 電子線 / 極端紫外線(EUV) / 化学増幅型レジスト / 半導体微細化

Outline of Final Research Achievements

Ionizing radiation such as extreme ultraviolet (EUV) light and electron beam has been used in lithography process used in semiconductor manufacturing. Therefore development of the resist materials with higher performance has been desired. Acid-generating promoters (AGPs) can improve the sensitivity of the chemically amplified resist upon irradiation of ionizing radiation. Research on the effectiveness and mechanism of AGPs for enhancement of the deprotonation efficiency were carried out. The details of the radiation-induced reaction of resist constituent molecules were also clarified.

Free Research Field

放射線化学・工学

Academic Significance and Societal Importance of the Research Achievements

現在半導体製造で使われているレジスト材料の性能の向上のために、現行のレジストに添加するだけで脱プロトン反応性等の向上効果のある酸生成促進剤の有効性を示すとともに、その機能の解明を行った。酸生成促進剤の化学構造が、電子または正電荷を受容した後も室温下でも安定に存在でき、酸生成の促進に寄与できることが明らかになった。また、本成果により今後の半導体製造の生産性の向上に繋がることが期待される。