Spatial Distribution Analysis of Photo Resist Using Resonant Soft X-ray Reflectmetry and Scattering methods

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K12644
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 80040:Quantum beam science-related
• Research Institution: University of Hyogo
• Principal Investigator: Harada Tetsuo 兵庫県立大学, 高度産業科学技術研究所, 准教授 (30451636)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: フォトレジスト / 軟Ｘ線共鳴散乱 / 軟Ｘ線共鳴反射率 / EUVリソグラフィー

Outline of Final Research Achievements

Spatial distribution of functional group in photoresist is required to control to achieve high performance semiconductor device. We have developed resonant soft X-ray reflectometry and scattering method to measure the spatial distribution. Using the reflectometry at the carbon K absorption edge region, the resist had separated layers at the surface side and the bottom side of the substrate. Using the scattering method of conventional transmission mode, the spatial distribution were evaluated with the resist on thin membrane. In addition, we have developed reflection mode method for measure the resist sample on the Si wafer. The spatial distribution were strongly depended on the film thickness, which should be reduce even at the thin resist for high density patterning.

Free Research Field

軟Ｘ線光工学

Academic Significance and Societal Importance of the Research Achievements

半導体は基幹産業であるだけでなく、その性能向上は将来のSDGsやDXやグリーンイノベーションなどにも欠かせない。本研究では半導体性能向上に直接つながるフォトレジストの性能を評価するための測定手法の開発に成功した。従来技術では軽元素により構成されているフォトレジストの官能基のばらつきなどは評価が難しかったが、軟Ｘ線の共鳴ピークを利用した反射率と散乱測定により、深さ方向と面内方向の３次元的な分布を明らかにすることができた。この評価技術を材料メーカーに利用してもらうことにより、半導体の性能向上に直接つながるため社会的な意義が大きい。