Development of a High-Sensitivity Skin Gas Sensor Using Graphene Biosensors for Disease Prevention and Diagnosis

2023 Fiscal Year Final Research Report

• Project/Area Number: 19K12854
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 90130:Medical systems-related
• Research Institution: Hachinohe National College of Technology
• Principal Investigator: Nakamaura Yoshitaka 八戸工業高等専門学校, その他部局等, 教授 (00290685)
• Co-Investigator(Kenkyū-buntansha): 鎌田 貴晴 八戸工業高等専門学校, その他部局等, 助教 (50435400)
• Project Period (FY): 2019-04-01 – 2024-03-31
• Keywords: 二次元材料 / ファンデアワールス接合 / 結晶成長 / 電気特性 / ガスセンサー

Outline of Final Research Achievements

Various gases (skin gases) are emitted from human skin, and research is being conducted to use the types of these gases as indicators for the early detection and diagnosis of diseases. For example, acetone concentrations increase in individuals with diabetes. Therefore, we have developed crystal growth technologies for graphene, hexagonal boron nitride, and transition metal dichalcogenides, which have high gas detection sensitivity. We have also developed van der Waals heterojunction devices by stacking or rotating various two-dimensional materials. Additionally, we constructed an automatic measurement system and developed measurement programs for these sensors. Finally, we evaluated the electrical properties of the van der Waals heterojunction devices.

Free Research Field

電気電子材料

Academic Significance and Societal Importance of the Research Achievements

グラフェンや二流化モリブデンなどの二次元材料をデバイスに応用する場合、下地基板からの影響を少なくする必要がある。最適な下地材料として、六方晶窒化ホウ素(h-BN)が注目されているが、高品質のものを得る事は困難であった。本研究では、Si基板上に直接、触媒金属なしでh-BNを成長させる事に成功し、更に、CVD h-BN/Si基板の上に、スパッタ法によりh-BNをホモ成長させる事に成功し、ラマンピークの半値全幅が9.9°と非常に高品質のh-BNを合成できた事は、学術的にも社会的にも意義のある成果を得る事ができた。