Control of Interface Fluctuation in Nitride Semiconductor Heterostructure and its Application to Quantum Optical Devices

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K15025
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Mie University
• Principal Investigator: Shojiki Kanako 三重大学, 工学研究科, 助教 (60779734)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 窒化物半導体 / 窒化アルミニウム / 表面形態

Outline of Final Research Achievements

The purpose of this study was to control the interface fluctuations in AlGaN vapor phase growth for quantum optical applications and to clarify their effects on optical properties of AlGaN quantum wells (QWs). First, to achieve flat AlN templates with low threading dislocation, homo-epitaxial growth of AlN on face-to-face annealed sputtered AlN (FFA Sp-AlN) was performed using metal organic vapor phase epitaxy (MOVPE). Then, we realized a atomically flat surface with step-and-terrace structure of MOVPE-grown AlN on FFA Sp-AlN. AlGaN/AlGaN QWs were grown on the MOVPE-grown AlN/FFA Sp-AlN and their luminescence properties were investigated. Furthermore, selective MOVPE growth on patterned AlN allowed us to control atomic-step-edge-density on the AlN surface.

Free Research Field

結晶工学

Academic Significance and Societal Importance of the Research Achievements

本研究期間中に、低いらせん転位（欠陥）密度のスパッタアニールAlNの作製、MOVPE法による表面の原子層ステップ端密度の制御としてスパッタアニールAlN上のホモエピタキシャル成長条件の最適化とパターン加工スパッタアニールAlN上の選択MOVPE成長による原子層ステップ端密度制御、スパッタアニールAlN上AlGaN量子井戸構造の光学特性評価を行うことができた。これらの成果は量子光学応用は勿論のこと、従来からある深紫外LEDや電子デバイスの高性能化にも直接繋がる技術であり、既に論文発表ができていることから窒化物半導体AlNをベースとした結晶成長およびデバイス応用の分野の発展に寄与する。