2020 Fiscal Year Annual Research Report
Research and development of new type photo-devices using compound semiconductors
| Project/Area Number |
19K15029
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
カトリ イゾール 東京理科大学, 研究推進機構総合研究院, 助教 (50562740)
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| Project Period (FY) |
2019-04-01 – 2021-03-31
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| Keywords | Defect physics / Admittance Spectroscopy / JVT / CIGS solar cell / Stability |
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| Outline of Annual Research Achievements |
Temperature-dependent current-voltage, admittance spectroscopy, capacitance-voltage measurements were performed on cesium fluoride (CsF)-treated CIGS solar cell before and after heat-light soaking (HLS) and subsequent heat-soaking (HS) treatments to analyse the defect and metastable properties of the device.
It was found that HLS treatment of CsF-treated CIGS solar cell formed cesium-induced defects for minority carrier recombination.
The admittance measurement showed a shift of the shallow energy position to a higher value after HLS and subsequent HS, which was due to the formation of a secondary diode toward the CIGS/molybdenum contact.
The low-temperature C-V measurement showed that HLS and subsequent HS treatment (HLS/HS) passivate IIICu anti-site defects.
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Research Products
(4 results)
