Analysis of enhanced electron-phonon scattering at semiconductor surface/interface

2022 Fiscal Year Final Research Report

• Project/Area Number: 19K15050
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: The University of Tokyo
• Principal Investigator: Tanaka Takahisa 東京大学, 大学院工学系研究科(工学部), 助教 (30782081)
• Project Period (FY): 2019-04-01 – 2023-03-31
• Keywords: ナノワイヤ / ナノシート / キャリア散乱 / フォノン / 移動度

Outline of Final Research Achievements

In order to understand the modulation of carrier scattering at surfaces/interfaces, which is not observed in bulk materials, carrier transport in nanowires and nanosheets is computationally reproduced and compared with experiments. The carrier transport was calculated by a combination of molecular dynamics and quantum transport calculations, and the effect of electron-phonon scattering was successfully taken into account with a low computational burden. As a result, we succeeded in reproducing the carrier transport on a scale similar to that of realistic semiconductor nanowires and metallic nanosheets, and analyzed the modulation of carrier scattering.

Free Research Field

電子デバイス

Academic Significance and Societal Importance of the Research Achievements

本研究で得られた表面/界面におけるキャリア散乱の理解は，今後の集積回路内のトランジスタや配線の設計・材料選択において，表面/界面のエンジニアリングによる電気特性の制御を実現するために重要である．また，本研究で実施した計算手法は低い計算負荷で現実的なキャリア輸送を再現できることから，集積回路に限らず様々なデバイスの特性を予測し，材料の最適化を行う際に適用可能である．