Band-gap energy control of graphitic carbon nitride for the creation of environment-friendly semiconductor material

2020 Fiscal Year Final Research Report

• Project/Area Number: 19K15455
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 30010:Crystal engineering-related
• Research Institution: Shinshu University
• Principal Investigator: Urakami Noriyuki 信州大学, 学術研究院工学系, 助教 (80758946)
• Project Period (FY): 2019-04-01 – 2021-03-31
• Keywords: グラファイト状窒化炭素 / 層状物質 / フォトルミネッセンス / 化学気相堆積

Outline of Final Research Achievements

Graphitic carbon nitride (g-C3N4) has received much attentions as a non-toxic　functional material that can be applied in metal-free photocatalysis; it is also considered a novel semiconductor material for application in optoelectronic having bandgap energy of approximately 2.8 eV. Bandgap engineering of graphitic carbon nitride was investigated via incorporating substitutional atoms. The synthesis of a B-incorporated g-C3N4 alloy has been demonstrated; the alloy exhibited a shift in luminescence color from blue (2.8 eV) to near-ultraviolet (~ 3.6 eV).In addition, the growth of g-C3N4 under H2 gas flow was investigated for Si doping of metal-organic precursor.

Free Research Field

結晶工学、電気電子材料工学

Academic Significance and Societal Importance of the Research Achievements

本研究の成果は、g-C3N4へのB添加によりバンドギャップエネルギーが連続的に制御可能であることを初めて示した。これにより、ありふれた元素のみで構成されるg-C3N4により様々な波長で発光する半導体材料が実現できれば、原料コストや毒性などを気にせず利用可能な材料が創生できることを期待し得る。また他の異種元素の添加による物性制御にも役立つ可能性が高い。さらに光触媒応用に対しても、水素発生の効率向上に向けたエネルギー準位制御にの参考になると考えられ、本成果が波及すると考えらえる。